Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode implemented on a surface of the piezoelectric substrate, such that the surface acoustic device supports a surface acoustic wave having a wavelength ? and a phase velocity less than 3,000 m/s with an electromechanical coupling coefficient of at least 9.0. In some embodiments, the phase velocity less than 2,000 m/s, and the surface acoustic wave can include a lowest asymmetry (A0) mode. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.

Abstract: In some embodiments, a surface acoustic wave device can include a piezoelectric substrate and an interdigital transducer electrode embedded in a surface of the piezoelectric substrate to support a high-order mode of a surface acoustic wave having a wavelength ? and a phase velocity greater than 8,000 m/s. Such a high-order mode can include a third-order mode, and the phase velocity can be at least 9,000 m/s. In some embodiments, such a surface acoustic wave device can be implemented in products such as a radio-frequency filter, a radio-frequency module and a wireless device.

Abstract: An acoustic wave device that can achieve a good characteristic in a superhigh frequency band of 6 GHz or higher by using an overtone. The device includes: a piezoelectric substrate; an electrode provided in such a way as to be in contact with the piezoelectric substrate; and an acoustic multilayer film provided in such a way as to be in contact with the piezoelectric substrate and/or the electrode and is configured to use an overtone of resonance characteristics of a surface acoustic wave. The electrode includes an interdigital transducer provided on one of surfaces of the piezoelectric substrate. The surface acoustic wave that is the overtone preferably has a velocity of 9000 m/s or higher. The acoustic multilayer film is preferably composed of an acoustic low impedance film and an acoustic high impedance film which are alternately stacked.

Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: An elastic wave device capable of obtaining good characteristics while maintaining sufficient mechanical strength in an ultra-high frequency band of 6 GHz or higher includes: a piezoelectric substrate; an electrode in contact with the piezoelectric substrate; and an acoustic multilayer film in contact with the piezoelectric substrate and/or the electrode. The elastic wave device is configured to utilize higher-order modes of resonance characteristics of bulk waves. The acoustic multilayer film has a low acoustic impedance film and a high acoustic impedance film which are alternately stacked.

Abstract: A high-order mode surface acoustic wave device includes a piezoelectric substrate (11) formed from a LiTaO3 or LiNbO3 crystal and an interdigital transducer electrode (12) embedded in a surface of the piezoelectric substrate (11) to use a surface acoustic wave in a high-order mode. Further, the high-order mode surface acoustic wave device may include a film (13) or substrate stacked on the piezoelectric substrate (11), and may include a support substrate (11) and/or a multi-layer film (15) provided in contact with a surface opposite to the surface of the piezoelectric substrate (11) on which the interdigital transducer electrode (12) is provided. The high-order mode surface acoustic wave device may achieve good characteristics and maintain a sufficient mechanical strength even in a high frequency band of 3.8 GHz or greater.

Abstract: Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Abstract: An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric body including LiTaO3, a first electrode on a first main surface of the piezoelectric body, a second electrode on a second main surface, an acoustic-layer laminated body between a support substrate and the piezoelectric body. The azimuth angle of the piezoelectric body is (about 85° to 95°, about 85° to 95°, about 5° to 65°) represented in Euler angles.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric body, an acoustic layer laminate, first and second electrodes, and a lead-out electrode. The first electrode is on a first main surface of the piezoelectric body, the second electrode is on a second main surface of the piezoelectric body, the lead-out electrode is on the first main surface or the second main surface of the piezoelectric body, the lead-out electrode is electrically connected to the first electrode or the second electrode, side surface grooves extend from the first main surface side of the piezoelectric body, and the side surface grooves are provided in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode.

Abstract: Energy confinement in acoustic wave devices. In some embodiments, a surface acoustic wave device can include a quartz substrate, a piezoelectric film formed from LiTaO3 or LiNbO3 and disposed over the quartz substrate, and an interdigital transducer electrode formed over the piezoelectric film. The surface acoustic wave device can further include a bonding layer implemented over the piezoelectric film, and a cap layer formed over the bonding layer to thereby substantially confine energy of a propagating wave below the cap layer.

Abstract: Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density p in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO3 or LiNbO3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

Abstract: Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

Abstract: An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Abstract: An elastic wave device includes an IDT electrode disposed on a LiNbO3 substrate and an aluminum nitride film or a silicon nitride film is stacked to cover the IDT electrode and utilizes a leaky elastic wave. The IDT electrode includes a metal selected from a group consisting of Cu, Al, Au, Pt, and Ni. Euler angles of the LiNbO3 are (0°±5°, ?, 0°±5°), and when X denotes a wavelength-normalized thickness of the IDT electrode and Y denotes ? of the Euler angles, Y is set in a specific range depending on the range of the wavelength-normalized thickness of the IDT electrode, the range of the wavelength-normalized thickness of the aluminum nitride film or the silicon nitride film, and the kind of metal of which the IDT electrode is composed.

Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode disposed in a piezoelectric vibrating portion of the piezoelectric substrate to pass through the piezoelectric substrate.