Patents by Inventor Michio Kadota

Michio Kadota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210159883
    Abstract: Energy confinement in acoustic wave devices. In some embodiments, a surface acoustic wave device can include a quartz substrate, a piezoelectric film formed from LiTaO3 or LiNbO3 and disposed over the quartz substrate, and an interdigital transducer electrode formed over the piezoelectric film. The surface acoustic wave device can further include a bonding layer implemented over the piezoelectric film, and a cap layer formed over the bonding layer to thereby substantially confine energy of a propagating wave below the cap layer.
    Type: Application
    Filed: November 22, 2020
    Publication date: May 27, 2021
    Inventors: Michio KADOTA, Shuji TANAKA, Yoshimi ISHII, Hiroyuki NAKAMURA, Keiichi MAKI, Rei GOTO
  • Publication number: 20210083645
    Abstract: Surface acoustic wave device having mass-loaded electrode. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density p in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.
    Type: Application
    Filed: September 15, 2020
    Publication date: March 18, 2021
    Inventors: Michio KADOTA, Shuji TANAKA, Hiroyuki NAKAMURA
  • Publication number: 20200119711
    Abstract: Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO3 or LiNbO3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.
    Type: Application
    Filed: October 15, 2019
    Publication date: April 16, 2020
    Inventors: Michio KADOTA, Shuji TANAKA, Yoshimi ISHII
  • Publication number: 20200119710
    Abstract: Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.
    Type: Application
    Filed: October 15, 2019
    Publication date: April 16, 2020
    Inventors: Michio KADOTA, Shuji TANAKA, Yoshimi ISHII
  • Publication number: 20190319603
    Abstract: An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.
    Type: Application
    Filed: November 15, 2017
    Publication date: October 17, 2019
    Inventors: Michio KADOTA, Shuji TANAKA
  • Patent number: 10312883
    Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: June 4, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Michio Kadota, Tetsuya Kimura, Kenya Hashimoto, Shuji Tanaka
  • Patent number: 10177739
    Abstract: An elastic wave device includes an IDT electrode disposed on a LiNbO3 substrate and an aluminum nitride film or a silicon nitride film is stacked to cover the IDT electrode and utilizes a leaky elastic wave. The IDT electrode includes a metal selected from a group consisting of Cu, Al, Au, Pt, and Ni. Euler angles of the LiNbO3 are (0°±5°, ?, 0°±5°), and when X denotes a wavelength-normalized thickness of the IDT electrode and Y denotes ? of the Euler angles, Y is set in a specific range depending on the range of the wavelength-normalized thickness of the IDT electrode, the range of the wavelength-normalized thickness of the aluminum nitride film or the silicon nitride film, and the kind of metal of which the IDT electrode is composed.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: January 8, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Michio Kadota
  • Patent number: 9929717
    Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode disposed in a piezoelectric vibrating portion of the piezoelectric substrate to pass through the piezoelectric substrate.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: March 27, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tetsuya Kimura, Michio Kadota
  • Patent number: 9755614
    Abstract: A tunable filter is a ladder circuit tunable filter including serial arm resonators and a parallel arm resonator. The serial arm resonators and the parallel arm resonator include elastic wave resonators. Variable capacitors are connected in series to the serial arm resonators, a variable capacitor is connected in parallel to the parallel arm resonator, and first inductors are connected in series to the serial arm resonators. When an impedance at a resonant frequency of the serial arm resonators is Zrs and an impedance at a resonant frequency of the parallel arm resonator is Zrp, a ratio Zrs/Zrp is not greater than 1.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: September 5, 2017
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Michio Kadota
  • Patent number: 9564873
    Abstract: An elastic wave device making use of an SH plate wave propagating in LiNbO3 substrates includes a LiNbO3 substrate, IDT electrodes located on at least one surface of the LiNbO3 substrate, and a support which is bonded to the LiNbO3 substrate such that the support is located outside a region provided with the IDT electrodes and supports the LiNbO3 substrate, wherein ? of the Euler angles (0°, ?, 0°) of the LiNbO3 substrate ranges from about 92° to about 138° and the thickness of the LiNbO3 substrate ranges from about 0.05? to about 0.25?, where ? is the wavelength determined by the pitch between electrode fingers of the IDT electrodes.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: February 7, 2017
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Michio Kadota
  • Publication number: 20160352304
    Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.
    Type: Application
    Filed: August 10, 2016
    Publication date: December 1, 2016
    Inventors: Michio KADOTA, Tetsuya KIMURA, Kenya HASHIMOTO, Shuji TANAKA
  • Publication number: 20160344369
    Abstract: An elastic wave device includes an IDT electrode disposed on a LiNbO3 substrate and an aluminum nitride film or a silicon nitride film is stacked to cover the IDT electrode and utilizes a leaky elastic wave. The IDT electrode includes a metal selected from a group consisting of Cu, Al, Au, Pt, and Ni. Euler angles of the LiNbO3 are (0°±5°, ?, 0°±5°), and when X denotes a wavelength-normalized thickness of the IDT electrode and Y denotes ? of the Euler angles, Y is set in a specific range depending on the range of the wavelength-normalized thickness of the IDT electrode, the range of the wavelength-normalized thickness of the aluminum nitride film or the silicon nitride film, and the kind of metal of which the IDT electrode is composed.
    Type: Application
    Filed: August 8, 2016
    Publication date: November 24, 2016
    Inventor: Michio KADOTA
  • Patent number: 9413331
    Abstract: A piezoelectric bulk-wave resonator has a single-crystal LiNbO3 substrate whose Euler Angles are in the ranges of about (78° to 106°, 78° to 104°, 18° to 53°), a first driver electrode on a first main surface of the single-crystal LiNbO3 substrate, and a second driver electrode on a second main surface. The first driver electrode and the second driver electrode overlap with the single-crystal LiNbO3 substrate therebetween. The piezoelectric bulk-wave resonator uses the thickness-shear mode.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: August 9, 2016
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Michio Kadota
  • Publication number: 20160065165
    Abstract: A tunable filter is a ladder circuit tunable filter including serial arm resonators and a parallel arm resonator. The serial arm resonators and the parallel arm resonator include elastic wave resonators. Variable capacitors are connected in series to the serial arm resonators, a variable capacitor is connected in parallel to the parallel arm resonator, and first inductors are connected in series to the serial arm resonators. When an impedance at a resonant frequency of the serial arm resonators is Zrs and an impedance at a resonant frequency of the parallel arm resonator is Zrp, a ratio Zrs/Zrp is not greater than 1.
    Type: Application
    Filed: November 6, 2015
    Publication date: March 3, 2016
    Inventor: Michio KADOTA
  • Patent number: 9230745
    Abstract: A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: January 5, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Ivoyl P. Koutsaroff, Tetsuya Kimura, Hikari Tochishita
  • Publication number: 20150061466
    Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode disposed in a piezoelectric vibrating portion of the piezoelectric substrate to pass through the piezoelectric substrate.
    Type: Application
    Filed: November 10, 2014
    Publication date: March 5, 2015
    Inventors: Tetsuya KIMURA, Michio KADOTA
  • Publication number: 20140354512
    Abstract: A tunable filter device includes a first tunable filter with a first pass band, and a second tunable filter connected to the first tunable filter and having a second pass band located within the first pass band and a band width narrower than the band width of the first pass band. The second tunable filter includes a local oscillator that generates a predetermined frequency signal, a mixer that outputs a sum of and a difference between an output signal of the first tunable filter and the predetermined frequency signal output from the local oscillator, and an IF tunable filter connected to the mixer.
    Type: Application
    Filed: August 14, 2014
    Publication date: December 4, 2014
    Inventor: Michio KADOTA
  • Publication number: 20140339960
    Abstract: A piezoelectric bulk-wave resonator has a single-crystal LiNbO3 substrate whose Euler Angles are in the ranges of about (78° to 106°, 78° to 104°, 18° to 53°), a first driver electrode on a first main surface of the single-crystal LiNbO3 substrate, and a second driver electrode on a second main surface. The first driver electrode and the second driver electrode overlap with the single-crystal LiNbO3 substrate therebetween. The piezoelectric bulk-wave resonator uses the thickness-shear mode.
    Type: Application
    Filed: May 15, 2014
    Publication date: November 20, 2014
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventor: Michio Kadota
  • Patent number: 8810104
    Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: August 19, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Shunsuke Kido, Takeshi Nakao, Yasuharu Nakai, Kenji Nishiyama, Michio Kadota
  • Publication number: 20140145556
    Abstract: An elastic wave device making use of an SH plate wave propagating in LiNbO3 substrates includes a LiNbO3 substrate, IDT electrodes located on at least one surface of the LiNbO3 substrate, and a support which is bonded to the LiNbO3 substrate such that the support is located outside a region provided with the IDT electrodes and supports the LiNbO3 substrate, wherein ? of the Euler angles (0°, ?, 0°) of the LiNbO3 substrate ranges from about 92° to about 138° and the thickness of the LiNbO3 substrate ranges from about 0.05? to about 0.25?, where ? is the wavelength determined by the pitch between electrode fingers of the IDT electrodes.
    Type: Application
    Filed: February 3, 2014
    Publication date: May 29, 2014
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventor: Michio KADOTA