Patents by Inventor Michio Miura
Michio Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11336259Abstract: An acoustic wave device includes: a piezoelectric substrate: a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers; a support substrate having protruding portions and/or recessed portions in a region overlapping with the pair of comb-shaped electrodes in plan view, the protruding portions and/or recessed portions being regularly arranged; and an insulating layer directly or indirectly bonded between the piezoelectric substrate and the support substrate, a boundary face between the insulating layer and the support substrate being provided along the protruding portions and/or the recessed portions.Type: GrantFiled: February 26, 2020Date of Patent: May 17, 2022Assignee: TAIYO YUDEN CO., LTD.Inventors: Shinji Yamamoto, Ryohei Komiyama, Koichi Satoh, Hitoshi Tsukidate, Michio Miura
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Publication number: 20220094330Abstract: An acoustic wave device includes a support substrate having an uneven surface, a piezoelectric layer provided on the uneven surface of the support substrate, an electrode that excites an acoustic wave in the piezoelectric layer, and an insulating layer that is provided between the uneven surface of the support substrate and the piezoelectric layer, and has an air gap located in a recess part of the uneven surface.Type: ApplicationFiled: August 31, 2021Publication date: March 24, 2022Applicant: TAIYO YUDEN CO., LTD.Inventors: Shinji YAMAMOTO, Michio MIURA
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Publication number: 20200313650Abstract: An acoustic wave device includes: a piezoelectric substrate: a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers; a support substrate having protruding portions and/or recessed portions in a region overlapping with the pair of comb-shaped electrodes in plan view, the protruding portions and/or recessed portions being regularly arranged; and an insulating layer directly or indirectly bonded between the piezoelectric substrate and the support substrate, a boundary face between the insulating layer and the support substrate being provided along the protruding portions and/or the recessed portions.Type: ApplicationFiled: February 26, 2020Publication date: October 1, 2020Applicant: TAIYO YUDEN CO., LTD.Inventors: Shinji YAMAMOTO, Ryohei KOMIYAMA, Koichi SATOH, Hitoshi TSUKIDATE, Michio MIURA
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Patent number: 10097158Abstract: Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.Type: GrantFiled: September 22, 2015Date of Patent: October 9, 2018Assignee: TAIYO YUDEN CO., LTD.Inventors: Yasufumi Kaneda, Takuma Kuroyanagi, Hitoshi Tsukidate, Osamu Ikata, Kaoru Sakinada, Michio Miura, Tooru Takezaki
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Publication number: 20160112030Abstract: Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.Type: ApplicationFiled: September 22, 2015Publication date: April 21, 2016Applicant: TAIYO YUDEN CO., LTD.Inventors: Yasufumi KANEDA, Takuma KUROYANAGI, Hitoshi TSUKIDATE, Osamu IKATA, Kaoru SAKINADA, Michio MIURA, Tooru TAKEZAKI
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Patent number: 9231553Abstract: A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate, resonators that include a comb-shaped electrode formed on the piezoelectric substrate, a wiring portion that is connected to the comb-shaped electrode, and a dielectric layer formed to cover the comb-shaped electrode. The wiring portion is provided with a lower layer wiring portion that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion that is disposed on the lower layer wiring portion. The upper layer wiring portion includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion.Type: GrantFiled: January 5, 2012Date of Patent: January 5, 2016Assignee: TAIYO YUDEN CO., LTD.Inventors: Kazunori Inoue, Takashi Matsuda, Michio Miura
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Patent number: 9160300Abstract: An acoustic wave device includes: an electrode that is located on a substrate and excites an acoustic wave; and an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.Type: GrantFiled: September 11, 2012Date of Patent: October 13, 2015Assignee: TAIYO YUDEN CO., LTD.Inventors: Satoru Matsuda, Takashi Matsuda, Michio Miura
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Patent number: 9083303Abstract: An acoustic wave device includes a substrate, a dielectric film formed on the substrate and a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film. At least one of the substrate and the dielectric film is piezoelectric. The IDT electrodes each include an electrode finger that extends in at least one direction. A film thickness of the dielectric film changes in a gap portion between a tip of the electrode finger of one of the IDT electrodes and the other opposing IDT electrode in the direction of extension of the electrode finger.Type: GrantFiled: August 23, 2012Date of Patent: July 14, 2015Assignee: TAIYO YUDEN CO., LTD.Inventors: Satoru Matsuda, Michio Miura, Takashi Matsuda
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Patent number: 9050584Abstract: To provide a production method of a base metal catalyst for exhaust gas purification and with a catalyst activity, in which a base metal-supported catalyst is uniformly supported by a honeycomb substrate. A production method of a catalyst for exhaust gas purification, comprising the steps of preparing a honeycomb substrate having a plurality of cells, preparing a base metal-supported catalyst comprising a carrier supporting a metal containing a base metal having an exhaust gas purification performance, preparing a slurry having a pH of 7 or more by dispersing the base metal-supported catalyst in an aqueous solution, and introducing the slurry to a partition wall surface of the honeycomb substrate.Type: GrantFiled: January 15, 2013Date of Patent: June 9, 2015Assignee: Toyota Jidosha Kabushiki Kabushiki KaishaInventors: Mayuko Osaki, Michio Miura
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Patent number: 8975802Abstract: An acoustic wave device includes: a comb-like electrode provided on a piezoelectric substrate; and a first medium that covers the comb-like electrode and has at least a silicon oxide film in which an element is doped, wherein sonic speed in the silicon oxide film in which the element is doped is lower than sonic speed in an undoped silicon oxide film.Type: GrantFiled: August 2, 2012Date of Patent: March 10, 2015Assignee: Taiyo Yuden Co., Ltd.Inventors: Satoru Matsuda, Takashi Matsuda, Michio Miura
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Patent number: 8896399Abstract: An acoustic wave device includes: a substrate; a dielectric film formed on the substrate; opposing comb-shaped electrodes located between the substrate and the dielectric film, each of the opposing comb-shaped electrodes including an electrode finger, wherein at least one of the substrate and the dielectric film is a piezoelectric substance, an upper surface of the dielectric film, which is located above a gap between a tip of an electrode finger of one of the opposing comb-shaped electrodes and the other of the opposing comb-shaped electrodes, is inclined against an upper surface of the substrate in an extension direction of the electrode finger, and an inclination angle of the upper surface of the dielectric film against the upper surface of the substrate is equal to or larger than 30° and equal to or smaller than 50°.Type: GrantFiled: December 21, 2012Date of Patent: November 25, 2014Assignee: Taiyo Yuden Co., Ltd.Inventors: Michio Miura, Satoru Matsuda, Takashi Yamashita, Hiraki Domon
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Publication number: 20140342902Abstract: To provide a production method of a base metal catalyst for exhaust gas purification and with a catalyst activity, in which a base metal-supported catalyst is uniformly supported by a honeycomb substrate. A production method of a catalyst for exhaust gas purification, comprising the steps of preparing a honeycomb substrate having a plurality of cells, preparing a base metal-supported catalyst comprising a carrier supporting a metal containing a base metal having an exhaust gas purification performance, preparing a slurry having a pH of 7 or more by dispersing the base metal-supported catalyst in an aqueous solution, and introducing the slurry to a partition wall surface of the honeycomb substrate.Type: ApplicationFiled: January 15, 2013Publication date: November 20, 2014Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Mayuko Osaki, Michio Miura
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Patent number: 8720022Abstract: A method of producing an acoustic wave device includes: forming an interdigital electrode on a piezoelectric substrate; forming a barrier film so as to cover the interdigital electrode; forming a medium on the barrier film; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.Type: GrantFiled: December 24, 2009Date of Patent: May 13, 2014Assignee: Taiyo Yuden Co., Ltd.Inventors: Satoru Matsuda, Michio Miura, Takashi Matsuda
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Patent number: 8664835Abstract: An acoustic wave device includes: an electrode that excites an acoustic wave and is located on a substrate; and a silicon oxide film that is located so as to cover the electrode and is doped with an element or molecule displacing O in a Si—O bond, wherein the element or molecule is F, H, CH3, CH2, Cl, C, N, P, or S.Type: GrantFiled: December 12, 2012Date of Patent: March 4, 2014Assignee: Taiyo Yuden Co., Ltd.Inventors: Satoru Matsuda, Takashi Matsuda, Michio Miura
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Publication number: 20130093537Abstract: An acoustic wave device includes: an electrode that is located on a substrate and excites an acoustic wave; and an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.Type: ApplicationFiled: September 11, 2012Publication date: April 18, 2013Applicant: TAIYO YUDEN CO., LTD.Inventors: Satoru MATSUDA, Takashi MATSUDA, Michio MIURA
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Publication number: 20130049533Abstract: An acoustic wave device includes: a comb-like electrode provided on a piezoelectric substrate; and a first medium that covers the comb-like electrode and has at least a silicon oxide film in which an element is doped, wherein sonic speed in the silicon oxide film in which the element is doped is lower than sonic speed in an undoped silicon oxide film.Type: ApplicationFiled: August 2, 2012Publication date: February 28, 2013Applicant: TAIYO YUDEN CO., LTD.Inventors: Satoru MATSUDA, Takashi MATSUDA, Michio MIURA
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Patent number: 8354896Abstract: An acoustic wave device includes a plurality of acoustic wave devices each including a substrate made of a piezoelectric material, a pair of interdigital electrodes formed on the substrate, each of the interdigital electrodes including a plurality of electrode fingers, and an adjustment medium. The adjustment medium includes at least a single layer and is formed on at least a part of the pair of the interdigital electrodes. The adjustment medium further includes at least one thick portion and a thin portion, the thin portion being null or thinner than the thick portion, a total area of the at least one thick portion in a region covering the pair of interdigital electrodes being determined according to a predetermined characteristic value, wherein the plurality of acoustic wave devices include at least two acoustic wave devices that differ from each other with respect to the size of the total area of the at least one thick portion of the adjustment medium.Type: GrantFiled: July 29, 2009Date of Patent: January 15, 2013Assignee: Taiyo Yuden Co., Ltd.Inventors: Satoru Matsuda, Michio Miura, Takashi Matsuda
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Publication number: 20120313483Abstract: An acoustic wave device includes a substrate, a dielectric film formed on the substrate and a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film. At least one of the substrate and the dielectric film is piezoelectric. The IDT electrodes each include an electrode finger that extends in at least one direction. A film thickness of the dielectric film changes in a gap portion between a tip of the electrode finger of one of the IDT electrodes and the other opposing IDT electrode in the direction of extension of the electrode finger.Type: ApplicationFiled: August 23, 2012Publication date: December 13, 2012Applicant: TAIYO YUDEN CO., LTD.Inventors: Satoru MATSUDA, Michio MIURA, Takashi MATSUDA
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Patent number: 8269577Abstract: In an acoustic wave filter, a notch resonator is connected in series or parallel with a plurality of acoustic wave resonators connected in a ladder shape. The notch resonator has a main resonant frequency that is substantially equal to a sub-resonant frequency of the acoustic wave resonators. With this configuration, the occurrence of sub-resonant responses in filter characteristics can be suppressed, resulting in an improvement in communication characteristics.Type: GrantFiled: October 9, 2009Date of Patent: September 18, 2012Assignee: Taiyo Yuden Co., Ltd.Inventors: Shogo Inoue, Michio Miura, Takashi Matsuda
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Patent number: RE48129Abstract: An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.Type: GrantFiled: October 28, 2013Date of Patent: July 28, 2020Assignee: TAIYO YUDEN CO., LTD.Inventors: Takashi Matsuda, Kazunori Inoue, Michio Miura