Abstract: An environmental monitoring apparatus comprises: an infrared transmitting substrate 12 disposed in a prescribed ambient atmosphere 10; an infrared radiation source 20 for irradiating an infrared radiation to the infrared transmitting substrate 12; a contaminant analyzing means 30 for computing a concentration of a contaminant in the ambient atmosphere 10, based on the infrared radiation exited from the infrared transmitting substrate 12 after the infrared radiation has undergone multiple reflections inside the infrared transmitting substrate 12; and a contaminant removing means 50 for removing the contaminant in the ambient atmosphere 10 complied with the concentration of the contaminant in the ambient atmosphere 10, which have been computed by the contaminant analyzing means 30. Thus, the contaminant in the ambient atmosphere can be monitored with high sensitivity and real time, and can be immediately removed when the concentration in the ambient atmosphere exceed a prescribed value.

Abstract: A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Abstract: A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means 30 for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means 30; condensing means 40 for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means 50 for detecting the infrared radiation condensed by the infrared radiation condensing means 40, and analyzing means 60 for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.