Abstract: This gas turbine plant is provided with a gas turbine and a fuel supply facility. The fuel supply facility is provided with: a liquid ammonia line; a warm water line through which warm water can flow; a vaporizer which can perform the heat exchange between the warm water coming from the warm water line and liquid ammonia coming from the liquid ammonia line to heat and vaporize the liquid ammonia; a heat exchanger which can perform the heat exchange between the warm water in the warm water line and a medium; a heat exchange amount controller which can control the amount of heat exchange between the warm water and the medium to control the temperature of the warm water flowing into the vaporizer; and a gaseous ammonia line which can introduce gaseous ammonia that is ammonia vaporized by the vaporizer into the gas turbine.

Abstract: A semiconductor chip constituting an image pickup device is provided on a substrate and includes a connection terminal and an image pickup portion. A lens sheet having a lens portion is provided on the semiconductor chip. A groove is formed in at least the substrate to expose the connection terminal. A conductor pattern is formed in the groove and has one end electrically connected to the connection terminal.

Abstract: An image sensor is mounted on a substrate. A base is further formed on the substrate. The base has an opening above the image sensor. A filter is fixed to the opening of the base. The filter has a projecting dam member in a peripheral portion thereof. A lens barrel holding lenses is disposed on the filter.

Abstract: A compact camera module is disclosed that is capable of preventing adhesion of dust to an image pickup device in the compact camera module. The compact camera module includes a lens unit including a lens and a lens holder holding the lens therein and an image pickup unit attached to the lens unit. The image pickup unit includes a circuit board, an image pickup device on the circuit board, a cover member arranged on the circuit board to cover the image pickup device, and an optical filter arranged with respect to the cover member to face the image pickup device. The image pickup device is disposed in a substantially closed space formed by the circuit board, the cover member, and the optical filter. After the image pickup device is mounted on the circuit board, the image pickup device is disposed in the substantially closed space, and therefore, the compact camera module can be assembled with no occurrence of dust adhesion to the image pickup device.

Abstract: An image sensor is mounted on a substrate. A base is further formed on the substrate. The base has an opening above the image sensor. A filter is fixed to the opening of the base. The filter has a projecting dam member in a peripheral portion thereof. A lens barrel holding lenses is disposed on the filter.

Abstract: A semiconductor chip constituting an image pickup device is provided on a substrate and includes a connection terminal and an image pickup portion. A lens sheet having a lens portion is provided on the semiconductor chip. A groove is formed in at least the substrate to expose the connection terminal. A conductor pattern is formed in the groove and has one end electrically connected to the connection terminal.

Abstract: A mounting structure is disclosed that is capable of reliably installing a compact camera module into a socket while maintaining a good electrical connection between them. The mounting structure includes an electrode pad formed in a lower portion of the compact camera module, a contacting member having a contacting end and a springy portion disposed in the socket, and a depressed portion formed on the lower portion of the compact camera module to accommodate the springy portion of the contacting member so that the lower portion of the compact camera module does not make contact with the springy portion of the contacting member when the lower portion of the compact camera module is inserted into the socket. Therefore, the springy portion supplies a sufficiently large springy force to reliably bright the contacting end into contact with the electrode pad, and this maintains a good electrical connection between the contacting end and the electrode pad.

Abstract: A compact camera module is disclosed that is capable of preventing adhesion of dust to an image pickup device in the compact camera module. The compact camera module includes a lens unit including a lens and a lens holder holding the lens therein and an image pickup unit attached to the lens unit. The image pickup unit includes a circuit board, an image pickup device on the circuit board, a cover member arranged on the circuit board to cover the image pickup device, and an optical filter arranged with respect to the cover member to face the image pickup device. The image pickup device is disposed in a substantially closed space formed by the circuit board, the cover member, and the optical filter. After the image pickup device is mounted on the circuit board, the image pickup device is disposed in the substantially closed space, and therefore, the compact camera module can be assembled with no occurrence of dust adhesion to the image pickup device.

Abstract: A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate.

Abstract: An antenna device comprising a conductive earth substrate, a receiving element located in the proximity of said conductive earth substrate and having a receiving terminal, and a transmitting element located in the proximity of said receiving element and having a transmitting terminal, characterized in that an end of said receiving element and an end of said transmitting element are connected to said conductive earth substrate for grounding through a common portion and the frequency band of said receiving element is different from that of said transmitting element.

Abstract: An antenna apparatus having at least one radiating element. A second radiating element is located opposite a first radiating element. Earth is on the side opposite to the first radiating element with respect to the second radiating element thus opposite to the second radiating element. The second radiating element intervenes between the first radiating element and earth. Either the first or the second radiating element employs a feed terminal.

Abstract: This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

Abstract: A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area.

Abstract: This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

Abstract: This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

Abstract: A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area.

Abstract: A drier has a cooler block for drying internal cooling gas circulated in an electric machine, and the temperature of the cooler block is controlled by a thermoelectric device having Peltier effect and keep a constant temperature being near freezing point and not below the freezing point of dew drop contained in the gas.

Abstract: A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.

Abstract: A roof panel with solar batteries and a roof structure with solar batteries, which can improve water blocking between adjacent solar batteries integral with the roof panel. On the inclined surface of the roof Y is disposed the base panel 2, on which support rails 37 (each having a two-stage structure with a gutter and a cylindrical section 37a and 37b) are provided. A plurality of solar battery panels 3, provided with a frame (having an upper and a lower frame member 6 and 7 and paired vertical frame members 8) therearound, are each provided between paired support frames 37. The lower frame member 7 has an extension 25 extending from its side nearer the eaves N and covering the upper frame member 6 of the adjacent panel 3. The base and solar battery panels 2 and 3 are made integral with one another in the factory to be supplied as a roof panel 1 with solar batteries. With this structure, water is blocked around the solar battery panel 3 by the frame (6 to 8) therearound.

Abstract: A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes.