Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.

Abstract: A heat treatment apparatus permits manufacture of a high-accuracy resist pattern by reducing a temperature difference within a substrate surface in the transition state of heating or cooling the substrate and the steady state. The heat treatment apparatus includes a thermal plate having a main surface containing a first area on which the substrate is to be placed and a second area surrounding the first area, heat capacity per unit area in the second area of the main surface being smaller than heat capacity per unit area in the first area of the main surface; and a temperature control element for controlling temperature of the thermal plate in accordance with supplied current.

Abstract: A heat treatment apparatus permits manufacture of a high-accuracy resist pattern by reducing a temperature difference within a substrate surface in the transition state of heating or cooling the substrate and the steady state. The heat treatment apparatus includes a thermal plate having a main surface containing a first area on which the substrate is to be placed and a second area surrounding the first area, heat capacity per unit area in the second area of the main surface being smaller than heat capacity per unit area in the first area of the main surface; and a temperature control element for controlling temperature of the thermal plate in accordance with supplied current.

Abstract: An automatic developing apparatus comprises a developing tank and a pipe for introducing a developing solution into the developing tank. The developing tank is constituted by a stage on which a substrate is to be set, and a processing case movable relative to the stage, to receive said stage.