Patents by Inventor Michishige Saito

Michishige Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210178523
    Abstract: A part for substrate processing apparatus includes a marker with at least one of a surface and an inside of the part processed. The marker is configured such that two-dimensional code information is readable by at least one of a groove formed in the part by processing and two or more types of colors.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 17, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Michishige Saito, Sho Yamahira
  • Publication number: 20210111005
    Abstract: A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 ?m or less.
    Type: Application
    Filed: October 9, 2020
    Publication date: April 15, 2021
    Inventors: Takayuki Ishii, Kazuya Nagaseki, Michishige Saito, Shota Kaneko
  • Publication number: 20200312623
    Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.
    Type: Application
    Filed: March 30, 2020
    Publication date: October 1, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuki MOYAMA, Kazuya NAGASEKI, Shinji HIMORI, Michishige SAITO, Gen TAMAMUSHI
  • Publication number: 20200251315
    Abstract: A placing table, on which a substrate is placed, includes a base. The base includes a first path configured to allow a heat transfer medium having a first temperature to flow therein; a first heat insulating layer disposed under the first path; and a seal member disposed under the first heat insulating layer.
    Type: Application
    Filed: January 31, 2020
    Publication date: August 6, 2020
    Inventors: Michishige Saito, Shota Kaneko
  • Publication number: 20200211823
    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryuji HISATOMI, Chishio KOSHIMIZU, Michishige SAITO
  • Publication number: 20200126816
    Abstract: A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.
    Type: Application
    Filed: October 22, 2019
    Publication date: April 23, 2020
    Inventors: Michishige Saito, Shota Kaneko, Shuhei Yamabe
  • Publication number: 20190272977
    Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 5, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Michishige SAITO
  • Patent number: 9613837
    Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: April 4, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
  • Publication number: 20170069470
    Abstract: An upper electrode structure includes a first plate, a second plate and an electrostatic attraction unit. The first plate has a first region, a second region and a third region which are concentrically arranged. Each of the regions is provided with a multiple number of gas discharge openings. The electrostatic attraction unit is provided between the first plate and the second plate and is configured to attract the first plate. The electrostatic attraction unit is equipped with a first to third heaters for the first to third regions. The electrostatic attraction unit and the second plate provide a first supply path, a second supply path and a third supply path through which gases are supplied into the first to third regions, respectively. A first gas diffusion space, a second gas diffusion space and a third gas diffusion space are formed in the electrostatic attraction unit.
    Type: Application
    Filed: April 28, 2015
    Publication date: March 9, 2017
    Inventors: Koichi Murakami, Michishige Saito, Keita Kambara, Kenji Nagai
  • Publication number: 20150179405
    Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.
    Type: Application
    Filed: July 2, 2013
    Publication date: June 25, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Michishige Saito
  • Publication number: 20150129112
    Abstract: A shower head assembly includes an electrode plate, and a laminate base that is constituted of ceramic sheets and provided to hold the electrode plate. The laminate base includes no bonding surface between the ceramic sheets. The laminate base includes a first gas diffusion space formed in its central area and a second gas diffusion space formed in its peripheral area. A first heater electrode layer is provided above the first gas diffusion space, and a second heater electrode layer is provided above the second gas diffusion space. A first coolant passage is formed above the first gas diffusion space, and a second coolant passage is formed above the second gas diffusion space. A first gas supply passage is connected to the first gas diffusion space, and a second gas supply passage is connected to the second gas diffusion space.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 14, 2015
    Inventors: Michishige SAITO, Koichi MURAKAMI, Takashi YAMAMOTO
  • Publication number: 20150086302
    Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.
    Type: Application
    Filed: April 1, 2013
    Publication date: March 26, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
  • Patent number: 8821742
    Abstract: A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: September 2, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Ryoichi Yoshida, Tetsuo Yoshida, Michishige Saito, Toshikatsu Wakaki, Hayato Aoyama, Akira Obi, Hiroshi Suzuki
  • Patent number: 8512510
    Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: August 20, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Akira Koshiishi, Jun Hirose, Masahiro Ogasawara, Taichi Hirano, Hiromitsu Sasaki, Tetsuo Yoshida, Michishige Saito, Hiroyuki Ishihara, Jun Ooyabu, Kohji Numata
  • Publication number: 20110214813
    Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
    Type: Application
    Filed: May 16, 2011
    Publication date: September 8, 2011
    Inventors: Akira Koshiishi, Jun Hirose, Masahiro Ogasawara, Taichi Hirano, Hiromitsu Sasaki, Tetsuo Yoshida, Michishige Saito, Hiroyuki Ishihara, Jun Ooyabu, Kohji Numata
  • Publication number: 20100133234
    Abstract: A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.
    Type: Application
    Filed: February 4, 2010
    Publication date: June 3, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryoichi YOSHIDA, Tetsuo YOSHIDA, Michishige SAITO, Toshikatsu WAKAKI, Hayato AOYAMA, Akira OBI, Hiroshi SUZUKI
  • Publication number: 20100043974
    Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
    Type: Application
    Filed: October 28, 2009
    Publication date: February 25, 2010
    Inventors: Akira Koshiishi, Jun Hirose, Masahiro Ogasawara, Taichi Hirano, Hiromitsu Sasaki, Tetsuo Yoshida, Michishige Saito, Hiroyuki Ishihara, Jun Ooyabu, Kohji Numata
  • Patent number: 7506610
    Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
    Type: Grant
    Filed: May 26, 2005
    Date of Patent: March 24, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Akira Koshiishi, Jun Hirose, Masahiro Ogasawara, Taichi Hirano, Hiromitsu Sasaki, Tetsuo Yoshida, Michishige Saito, Hiroyuki Ishihara, Jun Ooyabu, Kohji Numata
  • Patent number: 7494561
    Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.
    Type: Grant
    Filed: May 26, 2005
    Date of Patent: February 24, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Akira Koshiishi, Jun Hirose, Masahiro Ogasawara, Taichi Hirano, Hiromitsu Sasaki, Tetsuo Yoshida, Michishige Saito, Hiroyuki Ishihara, Jun Ooyabu, Kohji Numata
  • Publication number: 20060042754
    Abstract: In order to improve a controllability of etching characteristics by way of precisely and freely controlling a flow or a density distribution of a processing gas introduced into a processing chamber, a plasma etching apparatus includes, as a gas inlet for introducing an etching gas into a plasma generation region PS in a chamber 10, an upper gas inlet (an upper central shower head 66a and an upper peripheral shower head 68a) for introducing a gas through an upper electrode 38; and a side gas inlet for introducing a gas through a sidewall of the chamber 10. The side gas inlet 104 has a side shower head 108 attached to the sidewall of the chamber 10.
    Type: Application
    Filed: July 29, 2005
    Publication date: March 2, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryoichi Yoshida, Tetsuo Yoshida, Michishige Saito, Toshikatsu Wakaki, Hayato Aoyama, Akira Obi, Hiroshi Suzuki