Patents by Inventor Michishige Saito

Michishige Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11532461
    Abstract: A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: December 20, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Michishige Saito, Shota Kaneko, Shuhei Yamabe
  • Patent number: 11515125
    Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: November 29, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Michishige Saito
  • Publication number: 20220310367
    Abstract: There is provided a substrate support comprising: a base; a first flow path that opens on a bottom surface of the base at a central portion of the base; a second flow path that surrounds the first flow path and opens on the bottom surface of the base; at least one third flow path communicating with the first flow path and arranged from the central portion toward an outer peripheral portion of the base; and at least one fourth flow path communicating with the second flow path, arranged from the central portion toward the outer peripheral portion of the base, and communicating with the at least one third flow path at the outer peripheral portion of the base.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 29, 2022
    Applicant: Tokyo Electron Limited
    Inventor: Michishige SAITO
  • Patent number: 11443922
    Abstract: A high frequency power supply member for supplying high frequency power includes: an inner conductor that forms a hollow; and an outer conductor arranged to surround the inner conductor, wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: September 13, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Michishige Saito, Yousuke Nagahata
  • Publication number: 20220076921
    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.
    Type: Application
    Filed: November 19, 2021
    Publication date: March 10, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Ryuji HISATOMI, Chishio KOSHIMIZU, Michishige SAITO
  • Publication number: 20220062943
    Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 3, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki ISHII, Kazuya NAGASEKI, Michishige SAITO
  • Publication number: 20210398782
    Abstract: A high frequency power supply member for supplying high frequency power includes: an inner conductor that forms a hollow; and an outer conductor arranged to surround the inner conductor, wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.
    Type: Application
    Filed: June 16, 2021
    Publication date: December 23, 2021
    Inventors: Michishige SAITO, Yousuke NAGAHATA
  • Publication number: 20210391153
    Abstract: A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10?6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.
    Type: Application
    Filed: June 3, 2021
    Publication date: December 16, 2021
    Inventors: Takayuki ISHII, Kazuya NAGASEKI, Michishige SAITO
  • Patent number: 11201034
    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: December 14, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryuji Hisatomi, Chishio Koshimizu, Michishige Saito
  • Publication number: 20210366697
    Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.
    Type: Application
    Filed: May 10, 2019
    Publication date: November 25, 2021
    Inventors: Michishige SAITO, Kazuya NAGASEKI, Shota KANEKO
  • Publication number: 20210366691
    Abstract: A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.
    Type: Application
    Filed: May 10, 2019
    Publication date: November 25, 2021
    Inventors: Michishige Saito, Kazuya Nagaseki, Shota Kaneko
  • Publication number: 20210178523
    Abstract: A part for substrate processing apparatus includes a marker with at least one of a surface and an inside of the part processed. The marker is configured such that two-dimensional code information is readable by at least one of a groove formed in the part by processing and two or more types of colors.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 17, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Michishige Saito, Sho Yamahira
  • Publication number: 20210111005
    Abstract: A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 ?m or less.
    Type: Application
    Filed: October 9, 2020
    Publication date: April 15, 2021
    Inventors: Takayuki Ishii, Kazuya Nagaseki, Michishige Saito, Shota Kaneko
  • Publication number: 20200312623
    Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.
    Type: Application
    Filed: March 30, 2020
    Publication date: October 1, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuki MOYAMA, Kazuya NAGASEKI, Shinji HIMORI, Michishige SAITO, Gen TAMAMUSHI
  • Publication number: 20200251315
    Abstract: A placing table, on which a substrate is placed, includes a base. The base includes a first path configured to allow a heat transfer medium having a first temperature to flow therein; a first heat insulating layer disposed under the first path; and a seal member disposed under the first heat insulating layer.
    Type: Application
    Filed: January 31, 2020
    Publication date: August 6, 2020
    Inventors: Michishige Saito, Shota Kaneko
  • Publication number: 20200211823
    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryuji HISATOMI, Chishio KOSHIMIZU, Michishige SAITO
  • Publication number: 20200126816
    Abstract: A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.
    Type: Application
    Filed: October 22, 2019
    Publication date: April 23, 2020
    Inventors: Michishige Saito, Shota Kaneko, Shuhei Yamabe
  • Publication number: 20190272977
    Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 5, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Michishige SAITO
  • Patent number: 9613837
    Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: April 4, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
  • Publication number: 20170069470
    Abstract: An upper electrode structure includes a first plate, a second plate and an electrostatic attraction unit. The first plate has a first region, a second region and a third region which are concentrically arranged. Each of the regions is provided with a multiple number of gas discharge openings. The electrostatic attraction unit is provided between the first plate and the second plate and is configured to attract the first plate. The electrostatic attraction unit is equipped with a first to third heaters for the first to third regions. The electrostatic attraction unit and the second plate provide a first supply path, a second supply path and a third supply path through which gases are supplied into the first to third regions, respectively. A first gas diffusion space, a second gas diffusion space and a third gas diffusion space are formed in the electrostatic attraction unit.
    Type: Application
    Filed: April 28, 2015
    Publication date: March 9, 2017
    Inventors: Koichi Murakami, Michishige Saito, Keita Kambara, Kenji Nagai