Patents by Inventor Michitaka Kameyama

Michitaka Kameyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7464131
    Abstract: A logical calculation circuit capable of storing data, and performing logical calculations with high reliability and high speeds are provided. The residual polarized state s? of a load ferroelectric capacitor Cs? is actively changed so that the residual polarized state s? of a load ferroelectric capacitor Cs? is opposite to the residual polarized state s of a storage ferroelectric capacitor Cs. In the case a reference potential is made c=0 in the calculation operation, even if the second data to be calculated x=1 is given to the storage ferroelectric capacitor Cs in the residual polarized state s (the first data to be calculated)=0, the ferroelectric capacitor Cs does not reverse in polarity. Even with combinations other than s=0 and x=1, the ferroelectric capacitor Cs does not reverse in polarity.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: December 9, 2008
    Assignee: Rohm Co., Ltd.
    Inventors: Michitaka Kameyama, Takahiro Hanyu, Hiromitsu Kimura, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
  • Patent number: 7450412
    Abstract: To provide a logical operation circuit which can perform a logical operation using a ferroelectric capacitor and a logical operation method. A logical operation circuit 1 has a ferroelectric capacitors CF and a transistor MP. The ferroelectric capacitor CF can retain a polarization state P1 (y=1) or P2 (y=0) corresponding to first operation target data y. In an operation process, a first terminal 3 of the ferroelectric capacitor 1 is precharged to a source potential Vdd, and a potential corresponding to second operation target data x, that is, a ground potential GND (x=1) or the source potential Vdd (x=0), is given to a second terminal 5 of the ferroelectric capacitor via a bit line BL. When the threshold voltage Vth of the transistor MP is set properly, the transistor MP becomes on or off (on, on, on, off) depending on the combination of x and y (0-0, 0-1, 1-0, 1-1).
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: November 11, 2008
    Assignee: Rohm Co., Ltd.
    Inventors: Michitaka Kameyama, Takahiro Hanyu, Hiromitsu Kimura, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
  • Publication number: 20060139844
    Abstract: A logical calculation circuit capable of storing data, and performing logical calculations with high reliability and high speeds are provided. The residual polarized state s? of a load ferroelectric capacitor Cs? is actively changed so that the residual polarized state s? of a load ferroelectric capacitor Cs? is opposite to the residual polarized state s of a storage ferroelectric capacitor Cs. In the case a reference potential is made c=0 in the calculation operation, even if the second data to be calculated x=1 is given to the storage ferroelectric capacitor Cs in the residual polarized state s (the first data to be calculated)=0, the ferroelectric capacitor Cs does not reverse in polarity. Even with combinations other than s=0 and x=1, the ferroelectric capacitor Cs does not reverse in polarity.
    Type: Application
    Filed: February 2, 2004
    Publication date: June 29, 2006
    Inventors: Michitaka Kameyama, Takahiro Hanyu
  • Patent number: 7026841
    Abstract: To provide a logical operation circuit and a logical operation method which can perform a logical operation using a ferroelectric capacitor. A logical operation circuit 1 has ferroelectric capacitors CF1 and CF2 and a transistor MP. The ferroelectric capacitor CF1 can retain a polarization state P1 corresponding to a logical operator. In an operation and storage process, a source potential Vdd corresponding to first operation target data y1=1 and a ground potential GND corresponding to second operation target data y2=0 are given to a first terminal 3 and a second terminal 5, respectively, of the ferroelectric capacitor CF1. The polarization state of the ferroelectric capacitor CF1 is thereby shifted to P4. A residual polarization state corresponding to the polarization state P4 is P2. The residual polarization state changes (P1, P1, P2 or P1) depending on the combination of y1 and y2 (0-0, 0-1, 1-0 and 1-1).
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: April 11, 2006
    Assignee: Rohm Co., Ltd.
    Inventors: Michitaka Kameyama, Takahiro Hanyu, Hiromitsu Kimura, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
  • Publication number: 20050152198
    Abstract: To provide a logical operation circuit and a logical operation method which can perform a logical operation using a ferroelectric capacitor. A logical operation circuit 1 has ferroelectric capacitors CF1 and CF2 and a transistor MP. The ferroelectric capacitor CF1 can retain a polarization state P1 corresponding to a logical operator. In an operation and storage process, a source potential Vdd corresponding to first operation target data y1=1 and a ground potential GND corresponding to second operation target data y2=0 are given to a first terminal 3 and a second terminal 5, respectively, of the ferroelectric capacitor CF1. The polarization state of the ferroelectric capacitor CF1 is thereby shifted to P4. A residual polarization state corresponding to the polarization state P4 is P2. The residual polarization state changes (P1, P1, P2 or P1) depending on the combination of y1 and y2 (0-0, 0-1, 1-0 and 1-1).
    Type: Application
    Filed: January 22, 2003
    Publication date: July 14, 2005
    Inventors: Michitaka Kameyama, Takahiro Hanyu, Hiromitsu Kimura, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
  • Publication number: 20050146922
    Abstract: To provide a logical operation circuit which can perform a logical operation using a ferroelectric capacitor and a logical operation method. A logical operation circuit 1 has a ferroelectric capacitors CF and a transistor MP. The ferroelectric capacitor CF can retain a polarization state P1 (y=1) or P2 (y=0) corresponding to first operation target data y. In an operation process, a first terminal 3 of the ferroelectric capacitor 1 is precharged to a source potential Vdd, and a potential corresponding to second operation target data x, that is, a ground potential GND (x=1) or the source potential Vdd (x=0), is given to a second terminal 5 of the ferroelectric capacitor via a bit line BL. When the threshold voltage Vth of the transistor MP is set properly, the transistor MP becomes on or off (on, on, on, off) depending on the combination of x and y (0-0, 0-1, 1-0, 1-1).
    Type: Application
    Filed: January 22, 2003
    Publication date: July 7, 2005
    Applicant: Rochim Co., Ltd.
    Inventors: Michitaka Kameyama, Takahiro Hanyu, Hiromitsu Kimura, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu