Abstract: A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an op

Abstract: A historical information recording device provided in a product for storing in a recorder product historical information relating to the product's manufacture, physical distribution, sale, registration, repair, and disposal and transmitting the information in response to information input from the outside, having a plurality of transmission modes and provided with a mode switcher for selecting a first transmission mode at the time of usual use and switching the transmission mode in response to an input signal to a second transmission mode with at least an output, frequency, method of modulation, or transmission time different from that of the first transmission mode, a historical information tamper prevention unit for prohibiting a write operation in the storage unit under predetermined conditions to prevent tampering of the product historical information, and a discriminator for discriminating if the recorder is the specific historical information recorder which should be covered by the recording and/or

Abstract: A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an op

Abstract: A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an op

Abstract: A semiconductor device capable of reducing a cell area without affecting the accuracy, capable of reducing the number of interconnection layers, and capable of realizing a hybrid circuit of a memory cell and peripheral circuit easily and at a low cost, including a bit line, a word line, control gate line, a capacitor with a first electrode connected to the word line, a read transistor comprising an NMOS connected between the bit line and a predetermined potential point and with a gate electrode connected to a second electrode of a capacitor, and a write transistor comprising an NMOS connected between the bit line and the second electrode of the capacitor and with a gate electrode connected to the control gate line.

Abstract: A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an op

Abstract: A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.

Abstract: A history information recording apparatus for recording history information about product equipment integrally therewith and the product equipment having this history information recording apparatus are provided. The history information recording apparatus comprises a first storage means for storing primary history information, a second storage means for storing secondary history information, an input module in which the primary history information and/or the second history information is inputted to be stored in the first storage means and/or the second storage means respectively, and a read module for reading the primary history information from the first storage means and the secondary history information from the second storage means. The first and second storage means, the input module, and the read module are arranged in the product information.

Abstract: A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.