Abstract: [Problem to be Solved]The invention providesa bonding ribbon which can guarantee a uniform fusing over the entire joint area throughout hundreds of thousands of continuous ultrasonic bonding cycles and which can realize an improved bonding strength and which also can avoid being broken while it is looped.

Abstract: An Au bonding wire for semiconductor device, comprising a wire-shaped Au alloy material consisting of: 3-15 mass ppm of Be, 3-40 mass ppm of Ca, 3-20 mass ppm of La, 3-20 mass ppm of at least one functional element selected from the group of Ce, Eu, Mg, and Si, and the remainder of Au, wherein the diameter of said Au alloy bonding wire is less than 23 microns, wherein said bonding wire has improved roundness of compressed bonded ball and improved fracture stress.

Abstract: To acquire the best combination of elongation and break strength on the Au alloy bonding wire. Adding 0.5-30 wt % of at least one element among Cu, Ag, Pd and Pt to high purity Au, a flat area about elongation ratio change appears between the range of 450-650° C. of heat-treatment temperature at wire drawing. Though the wire strength becomes decrease at this range of temperature, the strength is maintained at higher level against the heat treatment temperature of a standard elongation ratio of 4% of high purity Au alloy wire. Therefore, by the heat treatment of this flat range, Au alloy bonding wire, which has certain level of strength regardless of the temperature change, is acquired. Moreover, by selecting appropriate temperature range, different strength characteristics wires corresponding to the elongation ratio are acquired.

Abstract: [Issues to be Solved] To provide an aluminum ribbon for ultrasonic bonding, is able to realize the high bonding strength and is able to maintain defined level of bonding strength, during several ten thousand bonding cycles. [Means to be Solved] An aluminum ribbon for ultrasonic bonding is consisted aluminum metal or aluminum based alloy, the purity of aluminum is more than 99.99 wt %, and total amount of organic carbon non-ionic surfactant less than 500 molecular weight vaporized and adhered is 100-1,000 ?g/m2 on the mirror finished bright surface of aluminum ribbon.

Abstract: The present invention was held in order to resolve problems on above-mentioned conventional wire bumping material. This invention has the following purposes; (1) approximating Au—Ag alloy bumping balls to bond Al pads to ideal sphere shape (2) increasing assurance of Au—Ag alloy bump bonding to Al pads (3) shortening tail length of Au—Ag alloy bump (4) improving anti-Au consumption into solder (5) decreasing contamination of capillary tip by bump wire and hole around tip Means for resolution Au—Ag alloy for wire bumping comprising wherein Au, which purity is more than 99.99 mass %, comprising Au matrix and a particle of additive elements, consisting of 1 to 40 mass % Ag, which purity is more than 99.99 mass %.

Abstract: Issues to be Solved Au bonding wire for semiconductor device should be provided in circumstances such as reducing the diameter of bonding wire to less than 23 ?m, squashed ball with superior roundness should be formed and with strong tensile strength endurable against wire flow. Means as Solution Au bonding wire for semiconductor device, consisting of Au matrix and functional additives, containing: said Au matrix alloy including 3-15 mass ppm of Be, 3-40 mass ppm of Ca, and 3-20 mass ppm of La and roundness of squashed ball said Au alloy is 0.95-1.05.