Patents by Inventor Michitoshi Ohnishi

Michitoshi Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrophotographic photosensitive member and method for making such a member
    Patent number: 4670367
    Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
    Type: Grant
    Filed: January 21, 1986
    Date of Patent: June 2, 1987
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Koji Minami, Kazuyuki Goto, Hisao Haku, Takeo Fukatsu, Michitoshi Ohnishi, Yukinori Kuwano
  • Electrophotographic photosensitive member and method for making such a member containing amorphous silicon
    Patent number: 4568622
    Abstract: An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
    Type: Grant
    Filed: June 15, 1984
    Date of Patent: February 4, 1986
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Koji Minami, Kazuyuki Goto, Hisao Haku, Takeo Fukatsu, Michitoshi Ohnishi, Yukinori Kuwano