Abstract: A resin-encapsulated semiconductor device having a semiconductor chip mounted on a die pad with a die bonding portion interposed, a lead arranged in a periphery of the die pad and electrically connected with a bonding pad portion of the semiconductor chip, and an encapsulating resin layer which encapsulates the semiconductor chip so that a part of the lead is guided to the outside, wherein an adhesive resin layer is interposed at least either between the die pad and the die bonding portion is described, or between the semiconductor chip and the die bonding portion.

Abstract: According to a first embodiment of the present invention, there is provided a resin encapsulation type semiconductor device, comprising a semiconductor element and an epoxy resin composition used as an encapsulating resin, the composition containing as essential components:(a) an epoxy resin represented by formula (I) given below: ##STR1## where R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are hydrogen or an alkyl group respectively, and n.gtoreq.0,(b) a phenolic resin curing agent,(c) an imidazole compound, and(d) triphenyl phosphate.In the first embodiment of the present invention, a heat resistance skeletal structure is formed by the epoxy resin (a) and the phenolic resin curing agent (b) in the epoxy resin composition after cured, leading to an improved resistance to heat and to an improved package crack resistance.

Abstract: The device characteristics is in containing a maleimide resin with a content of 0.2 weight percent of less of an organic acid, a phenolic resin, and a combination of a basic catalyst and a peroxide as a curing catalyst. In addition, additives as a mold release agent such as a polyethylene wax and an inorganic filler are contained. The maleimide resin composition is prepared in such a manner that a part of the phenolic resin is preblended with the curing catalyst in advance of other components, while the remainder of the phenolic resin is added to the maleimide resin to prepolymerize, and then, the preblend and the prepolyer are blended the other components. The maleimide resin composition has excellent moldability by improvement of curing characteristics through combined use of a basic catalyst and a peroxide as a curing agent.

Abstract: A semiconductor device encapsulant contains (a) a thermosetting resin for providing a cured product having a glass transition temperature of not less than 190.degree. C., (b) a filler consisting of a fused silica, (c) a modifier consisting of an MBS or ABS, (d) a modifier consisting of a silicone rubber or a silicone gel, and (e) a lubricant containing a metal chelate compound.

Abstract: A light-emitting diode device includes a light-emitting diode chip, lead-frames respectively connected to an anode and a cathode of the light-emitting diode chip, an encapsulant for encapsulating the light-emitting diode chip and the lead-frames, and a buffer layer, formed between the encapsulant, on the one hand, and the light-emitting diode chip and the lead-frames, on the other, for reducing the stress acting from the encapsulant onto the light-emitting diode chip and the lead-frames. This device can be minimized degradation of quality caused by this stress, and maintained high product quality for a long period of time. An encapsulating epoxy resin composition contains 100 parts by weight of an epoxy resin, 70 to 140 parts by weight of a curing agent including an acid anhydride, 0.5 to 4.0 parts by weight of a curing accelerator including an onium or diazabicycloalkene salt, and 0.1 to 5.0 parts by weight of a thiophosphite. This resin composition can be suitably used as an encapsulant for LED devices.

Abstract: An encapsulant consisting of an epoxy resin composition and suitably used to encapsulate a semiconductor device which is to be surface-mounted contains(a) an epoxy resin,(b) a rubber-modified phenolic resin comprising a phenolic resin, and a methylmethacrylate-butadiene-styrene copolymer and a thermosetting silicon rubber dispersed in said phenolic resin,(c) a curing accelerator, and(d) a silica powder.

Abstract: In multimold semiconductor devices, semiconductor chips are mounted on a lead frame and bonded with wire, sealed by an inner resin, and further enclosed by an outer resin. In particular, wax to be added to the inner resin is at least one compound selected from the group consisting of ester group, fatty acid based, fatty acid metallic salt based, fatty alcohol, polyhydric alcohol, and fatty acid amide compounds. In the semiconductor devices sealed by the inner resin including wax thus defined, since the adhesion strength between the inner and outer resins can be increased, peeling resistance between the two and the moisture resistance can be improved markedly and cracks after dip soldering can be perfectly eliminated, without effecting any conventional inner resin treatment such as honing, burning, after-curing, etc.

Abstract: An epoxy resin composition for sealing, and a resin-sealed type semiconductor device in which this composition is used, of outstanding heat cycle resistance, humidity resistance and laser marking characteristics, can be obtained by using a combination of an organic phosphine compound and a metal complex dye. The epoxy resin composition, characterized in that it consists of epoxy resin, a curing agent having at least 2 phenolic hydroxyl groups per molecule, an organic phosphine compound and a metal complex dye; and to a resin-sealed type semiconductor device characterized in that it is sealed with this composition.

Abstract: An epoxy resin composition for encapsulation of semiconductor device comprises the components (a), (b), (c) and at least one of the components (d) and (e) as shown below:(a) 100 parts by weight of an epoxy resin having at least 2 epoxy groups in one molecule;(b) 8 to 65 parts by weight of a novolak type phenolic resin with an ortho ratio less than 50%;(c) 1.2 to 40 parts by weight of a polyvinyl acetal compound;(d) 0.8 to 30 parts by weight of a silicone oil; and(e) 4 to 80 parts by weight of a rubber-modified phenolic resin.The described epoxy resins composition for encapsulation of semiconductor devices can retain its high glass transition temperature in the cured product and also has low modulus of elasticity, as well as excellent humidity resistance and thermal shock resistance.

Abstract: A resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising:(a) 100 parts by weight of an epoxy resin;(b) 5 to 500 parts by weight of a curing agent having at least two phenolic hydroxyl groups in one molecule;(c) 0.01 to 20 parts by weight of an organic phosphine compound; and(d) 0.1 to 100 parts by weight of at least one antimony oxide selected from the group consisting of diantimony tetroxide, hexaantimony tridecaoxide and diantimony pentoxide high reliability in terms of thermal cycle resistance, humidity resistance and the like.