Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.

Abstract: To achieve a reduced number of components mounted on a printed wiring board, and a reduced mounting area of components. A MOSFET semiconductor device according to the present invention includes a transistor as a plurality of semiconductor layers formed in a semiconductor substrate, and includes a source electrode, a gate electrode, a drain electrode, and a gate insulating film. The MOSFET semiconductor device further includes an insulating film formed on a first principal surface of the semiconductor substrate, a resistance film formed on the insulating film and electrically connected with the drain electrode, and a resistance electrode formed on the resistance film and serving as a surface mount terminal. With this configuration, reduction can be achieved in the number of components mounted on the printed wiring board, and hence in the mounting area of the components, and heat generating in the resistance film can be transferred to the printed wiring board to prevent malfunction of a MOSFET due to heat.