Abstract: An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode (2) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Abstract: An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode (2) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

Abstract: Disclosed are methods for driving an electron-emitting device, an electron source, and an image-forming apparatus, driving circuits for an electron source and an image-forming apparatus, and an electron source and an image-forming apparatus, with each of which electron emission is effectively halted. A voltage (Vg−Vc)>0 is applied to an electron-emitting device placed in a driving state in which electrons should be emitted, thereby having the electron-emitting device emit electrons. A voltage (Vg−Vc)<0 is applied to an electron-emitting device placed in a halt state in which no electrons should be emitted, thereby having the electron-emitting device halt electron emission.

Abstract: A printed cloth in which a dye is deposited in dots on the cloth to form a desired printed pattern. Said dot deposition is formed in a length of 0.05 to 0.3 mm to the longitudinal direction of the fiber in single fiber unit of the yarn constituting said cloth. A fine printed pattern is deposited clearly in good reproducibility. The printed pattern can be formed by using the dyes of the three primary colors or of the three primary colors and black color. It is preferred that Dyes I , II and III having a perceived chromaticity index (a) and (b) defined in the color range [CIE 1976 (L, a, b) space] on the cloth within the following range are used as said dyes of three primary colors and DyeIV is used as said black dye.

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

Abstract: A method for making an image forming apparatus includes an assembly of a first unit provided with an image-forming element and a second unit provided with electron emission devices. A bonding agent is provided at a bonding section of the first unit; the bonding agent is heated, and then the first unit and the second unit are bonded to each other. Alternatively, a bonding agent may be provided at a bonding section of the second unit; the bonding agent is heated, and then the electron emitting members of the electron emission devices are formed. After providing a bonding agent at a bonding section of the second unit, a spacer also may be provided between the bonding agent and the electron emission devices, and then the bonding agent may be heated. In addition, a bonding agent may be provided at a bonding section of the second unit, and then the bonding agent may be heated locally.

Abstract: A sodium-containing glass substrate has a modified surface on which an electroconductive film is to be formed. The modified surface is constituted of a layer of which sodium concentration is lower than the bulk body of the glass substrate, preferably with a sodium content ratio to all the metal elements of not greater than 2 atomic percent. The modified surface may contain a reduced amount of sulfur as compared to the bulk body of the glass substrate.

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

Abstract: A sodium-containing glass substrate has a modified surface on which an electroconductive film is to be formed. The modified surface is constituted of a layer of which sodium concentration is lower than the bulk body of the glass substrate, preferably with a sodium content ratio to all the metal elements of not greater than 2 atomic percent. The modified surface may contain a reduced amount of sulfur as compared to the bulk body of the glass substrate.

Abstract: A printed cloth in which a dye is deposited in dots on the cloth to form a desired printed pattern. Said dot deposition is formed in a length of 0.05 to 0.3 mm to the longitudinal direction of the fiber in single fiber unit of the yarn constituting said cloth. A fine printed pattern is deposited clearly in good reproducibility. The printed pattern can be formed by using the dyes of the three primary colors or of the three primary colors and black color. It is preferred that Dyes I, II and III having a perceived chromaticity index (a) and (b) defined in the color range [CIE 1976 (L, a, b) space] on the cloth within the following range are used as said dyes of three primary colors and DyeIV is used as said black dye.______________________________________ I Yellow: (a) -20.about.0 (b) 50.about.90 II Red: (a) 50.about.70 (b) 0.about.20 III Blue: (a) -50.about.-1 (b) -50.about.-20 IV Black: (a) -6.about.6 (b) -6.about.

Abstract: A method of manufacturing an electron-emitting device includes providing a pair of electrodes and an electroconductive thin film arranged between the electrodes. The method also includes a step of forming an electron-emitting region in the electroconductive film by the steps of partially modifying the composition of the electroconductive thin film with a chemical change to make a region of the electroconductive thin film have a higher resistivity than a resistivity in other regions, and causing an electric current to run through the electroconductive thin film to form the electron-emitting region in the region having the higher resistivity.

Abstract: An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.

Abstract: A semiconductor layer structure comprises a first semiconductor layer, and a second semiconductor layer adjacent the first layer at a boundary. The first semiconductor layer has a uniform lattice constant in its layering direction. The second semiconductor layer has a distributed lattice constant varying in its layering direction. Each region of the second semiconductor layer is strained due to biaxial strain introduced by a difference in lattice constant between each region and the first semiconductor layer. The strain in the second semiconductor layer has a distribution such that no crystal defects occur in the second semiconductor layer when the second layer is thicker than a critical thickness defined by the maximum strain in the second layer. The strained semiconductor layer structure may be used as a light confinement layer in a semiconductor optical device.

Abstract: A semiconductor optical amplifier comprises a substrate and an active layer constructed as a quantum well structure. The active layer includes a plurality of well layers and a plurality of barrier layers which are alternately layered. The composition of each well layer is such that the well layers have different quantum levels. The barrier layers are subjected to biaxial strain to shift the energy band structures so as to eliminate the polarization dependency of optical gain in the active region.

Abstract: A semiconductor optical amplifying apparatus includes: a substrate; an active layer having a quantum well structure formed on the substrate, the active layer guiding first waveguide mode light and second waveguide mode light having a polarization direction perpendicular to that of the first waveguide mode light and amplifying the first waveguide mode light and the second waveguide mode light, the active layer having quantum wells such that projected quantization axes obtained by projecting quantization axes of the quantum wells thereof on a plane perpendicular to a light waveguide direction are inclined at 45.degree. with respect to vibration directions of electric field vectors of the first waveguide mode light and the second waveguide mode light; and an electrode for supplying a current to the active layer.

Abstract: A polarization insensitive optical amplifying apparatus having a semiconductor laser structure, and serving as an amplifier for imparting a gain to input light from outside the apparatus. In the optical amplifying apparatus, a second semiconductor layer is formed on at least a first semiconductor layer. The lattice constant of the second semiconductor layer is less than the lattice constant of the first semiconductor layer. The second semiconductor layer undergoes a biaxial tensile stress due to a lattice mismatch between the first and second semiconductor layers, and serves as a well layer of an active layer having a quantum well structure. A third semiconductor layer is also formed on at least the first semiconductor layer. The lattice constant of the third semiconductor layer is less than the lattice constant of the first semiconductor layer.

Abstract: A semiconductor optical amplifying apparatus includes: a substrate; an active layer having a quantum well structure formed on the substrate, the active layer guiding first waveguide mode light and second waveguide mode light having a polarization direction perpendicular to that of the first waveguide mode light and amplifying the first waveguide mode light and the second waveguide mode light, the active layer having quantum wells such that projected quantization axes obtained by projecting quantization axes of the quantum wells thereof on a plane perpendicular to a light waveguide direction are inclined at 45.degree. with respect to vibration directions of electric field vectors of the first waveguide mode light and the second waveguide mode light; and an electrode for supplying a current to the active layer.

Abstract: A semiconductor light amplifier comprises a substrate, a semiconductor activation layer formed on the substrate for propagating light, and amplifying light propagated through the activation layer which has a wavelength within a predetermined range when a current is applied thereto, an electrode for applying a current to at least a portion of the activation layer, and means for imparting a loss to the light propagated through the activation layer which has a wavelength in a portion of the predetermined wavelength range.