Abstract: A clean room wherein clean air obtained through filters from the upper portion of the clean room is blown toward the floor, through the openings in the floor, and with the clean air being discharged again through the filters from the upper portion of the clean room. The air flow rate of clean air in the aisle areas is greater than the air flow rate in the wafer handling areas, and the opening rate of the floor is smaller in the portion near to an air return under the floor than in the portion remote from the air return thereby greatly reducing the diffusion of dust to the wafer handling areas.

Abstract: Cleaning system to clean articles to remove foreign matters from surfaces of the articles. At least two treatment baths filled with respective cleaning liquids are provided. An intermediate bath is located between the adjacent two treatment baths. The intermediate bath is filled with the cleaning liquid filled in one of a pair of the adjacent treatment baths adjacent to the intermediate bath, and the cleaning liquid filled in the intermediate bath is then replaced with the cleaning liquid filled in the other treatment bath. At least one of the articles is moved successively from a first to the last one of the at least two treatment baths and through at least one the intermediate bath, while the article is maintained continuously and completely immersed in the cleaning liquid.

Abstract: This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.

Abstract: A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.

Abstract: A Hall element comprises a thin plate of n-type Si, the face of which accords with a {110} atomic plane, wherein the direction from one current electrode to the other current electrode is substantially <100> or <110> crystalline direction to which the direction from one Hall voltage electrode to the other Hall voltage electrode is substantially normal. This Hall element has a very low unbalanced voltage caused by the strain generated during the process of packaging.