Abstract: A method for depositing a material by adsorption onto a substrate, includes a step of exposing the substrate to a precursor molecule in the gaseous phase. These precursor molecules present a non-zero dipole moment. An electrical field is applied during the substrate exposing step to cause a reactive branch of the precursor molecules to adsorb into the surface of the substrate in a manner such that the precursor molecules have essentially a same orientation. Next, the substrate is exposed to reagent molecules in the gaseous phase which react with the adsorbed precursor molecules so that organic branches of the adsorbed precursor molecules other than the reactive organic branch are replaced by elements of the reagent molecules. This process results in the formation of a monoatomic layer.

Abstract: Carrier material (PL) is heated (MCH) to a heating temperature of between 200° C. and 400° C. and a gas mixture (MG) including tert-butyliminotris (diethylamino) tantalum (t-BuN=Ta(NEt2)3) is circulated in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material. The partial pressure of the tert-butyliminotris (diethylamino) tantalum is preferably greater than or equal to 25 mTorr.