Abstract: A control device is provided that includes a plate and a control unit. The control unit has a rotary unit designed as a transmitter unit and a receiver unit. The transmitter unit has a top surface and a bottom side, wherein a base is formed on the bottom side in a center region and a first magnetizable element or a first magnet for positioning the transmitter unit at a predefined position over the receiver unit is arranged in the center region. In a rest position the transmitter unit rests with the base on the plate and the axis of rotation extends essentially parallel to the normal of the plate, or the transmitter unit is tilted into an operating position such that the base rests only partially on the plate and the axis of rotation is tilted relative to the normal of the plate.

Abstract: A monitoring device is provided that includes a first line section with a first connection point and a second connection point spaced apart from the first connection point in the direction of the line, and with a control unit and with a first current sensing unit, having a current source. A first switch is inserted into the first connecting line and connects the first current source to the first connection point or disconnects it therefrom. In a first state the first switch is closed and the first current is impressed on the first line section and a first voltage determined by the amplitude of the actual current, and in a second state the first switch is open and a second voltage is determined, and the control unit is configured to ascertain the amplitude of the first actual current from the two voltages.

Abstract: An integrated magnetic field sensor, having a semiconductor body with a surface and a rear surface, and a metal carrier, with a front and a rear, wherein the rear of the semiconductor body is connected to the front of the metal carrier in a non-positive manner, and a Hall sensor, embodied on the surface of the semiconductor body, with a main extension surface, and a magnet with a first magnetic pole embodied along a first surface, which first magnetic pole has a central axis embodied in a perpendicular manner on the first surface, wherein the metal carrier, the magnet and the semiconductor body are arranged in a common housing and precisely one or at least one Hall sensor is arranged in the housing.

Abstract: A magnetic pressure sensor is provided that includes a semiconductor body with a top side and a back side, a Hall sensor formed on the top side of the semiconductor body, a spacer connected to the semiconductor body, whereby the spacer has a recess in the center, and a membrane covering the recess, whereby the membrane has a first material and has a ferromagnetic substance. The ferromagnetic substance concentrates a magnetic flux density of a source formed outside the ferromagnetic material, and the spacer is formed as a circumferential wall and has a second material and the second material is different from the first material in at least one element.

Abstract: A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.

Abstract: A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.

Abstract: A device having an integrated circuit and a circuit package. A first terminal contact, a second terminal contact, and a third terminal contact are brought out of the circuit package. The first terminal contact and the second terminal contact are each connected to terminals of the integrated circuit for power supply. The third terminal contact is connected to a terminal of the integrated circuit in the circuit package for signal transmission. A first capacitor is connected to the first terminal contact and a second capacitor is connected to the third terminal contact, wherein a fourth terminal contact and a fifth terminal contact are brought out of the circuit package, and the first capacitor is connected to the fourth terminal contact, and the second capacitor is connected to the fifth terminal contact.

Abstract: A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

Abstract: A circuit assembly having a controller in which the Hall sensor or a programmable circuit component integrated therein is programmed by clocking or modulating a Hall sensor power supply voltage. A clocked or modulated controller power supply voltage is applied to the controller in clocked or modulated form; and where the clock or modulated Hall sensor power supply voltage is applied to the Hall sensor by the controller as a function of the clocked or modulated controller power supply voltage.

Abstract: An integrated magnetic field measuring device is provided that includes a semiconductor body arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a first magnetic field sensor, formed in the semiconductor body and having a first sensor signal, and second magnetic field sensor having a second sensor signal, and a current-carrying first conductor. A third magnetic field sensor with a third sensor signal is formed in the semiconductor body. The first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor have a substantially identical orientation to Earth's magnetic field and a different distance to the first conductor and the magnetic field of the first conductor simultaneously penetrates the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor.

Abstract: A current sensor having a magnetic field sensor, and a variable current source connected to the magnetic field sensor, and a first differential amplifier, connected to the magnetic field sensor, for amplifying a first sensor voltage. A second differential amplifier is provided and the second differential amplifier is connected to the first differential amplifier and to the current source. In the case of the first sensor voltage, a first operating current is present at the magnetic field sensor and in the case of a second sensor voltage, a second operating current is present, whereby the second Hall voltage is smaller than the first sensor voltage and the second operating current is greater than the first operating current.