Abstract: An LED element includes a substrate, a semiconductor lamination part that includes a light-emitting layer formed on a front surface of the substrate, a reflecting portion formed on a back surface of the substrate, and an electrode formed on the semiconductor lamination part. The electrode includes a diffusion electrode layer formed on the semiconductor lamination part and a moth-eye layer which is formed on the diffusion electrode layer and of which the front surface forms the transmissive moth-eye surface having depression parts or projection parts formed with a period smaller than twice the optical wavelength of the light emitted from the light-emitting layer.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×??P?16/9×? is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is ?.

Abstract: Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×??P?16/9×?, is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is ?.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: A second communication system starts transmission of direct data received from a core network apparatus without waiting to receive an end marker when the end marker indicating the last forwarding data forwarded from the first communication system is not received within an end marker waiting period.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: A second communication system starts transmission of direct data received from a core network apparatus without waiting to receive an end marker when the end marker indicating the last forwarding data forwarded from the first communication system is not received within an end marker waiting period.

Abstract: In adjusting transmission timings of frames sequentially transmitted from a radio network controller to a base transceiver station, the frame transmission schedule is changed in appropriate manner in response to a necessary Timing Adjustment control frame (TA). In a first period of time, which is a period of ignoring the received TA, the adjustment of the transmission timings of the frames is suspended. Also, out of the first period, the first period is varied in accordance with a variety of the delayed amount in transmission between the radio network controller and the base transceiver station. There is provided a period of ignoring a first control frame to be informed from the radio base transceiver station to the radio network controller. By setting the period to be a variable value, the synchronization control is accomplished with certainty.

Abstract: In adjusting transmission timings of frames sequentially transmitted from a radio network controller to a base transceiver station, the frame transmission schedule is changed in appropriate manner in response to a necessary Timing Adjustment control frame (TA). In a first period of time, which is a period of ignoring the received TA, the adjustment of the transmission timings of the frames is suspended. Also, out of the first period, the first period is varied in accordance with a variety of the delayed amount in transmission between the radio network controller and the base transceiver station. There is provided a period of ignoring a first control frame to be informed from the radio base transceiver station to the radio network controller. By setting the period to be a variable value, the synchronisation control is accomplished with certainty.

Abstract: The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a conductive substrate and an oxide semiconductor layer provided on the conductive substrate. The oxide semiconductor layer is a porous layer comprising porous titania particles which have been joined to each other to define interparticulate communicating pores. Preferably, the pores possessed by the titania particles per se have a diameter of 10 to 40 nm, the interparticulate communicating pores have a diameter of 10 to 70 nm, and the titania particles have an average diameter of 10 to 70 nm.

Abstract: The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a conductive substrate and an oxide semiconductor layer provided on the conductive substrate. The oxide semiconductor layer is a porous layer comprising porous titania particles which have been joined to each other to define interparticulate communicating pores. Preferably, the pores possessed by the titania particles per se have a diameter of 10 to 40 nm, the interparticulate communicating pores have a diameter of 10 to 70 nm, and the titania particles have an average diameter of 10 to 70 nm.