Patents by Inventor Mie Nagao

Mie Nagao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
    Patent number: 6975497
    Abstract: A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: December 13, 2005
    Assignee: NGK Insulators, Ltd.
    Inventors: Mie Nagao, Ryusuke Ushikoshi, Masashi Ohno
  • Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
    Patent number: 6549392
    Abstract: A method for reducing particles from an electrostatic chuck, wherein the difference between a wafer temperature before absorbing and a wafer maximum temperature after absorbing is 50° C. or below when the wafer is absorbed onto the electrostatic chuck.
    Type: Grant
    Filed: June 15, 1999
    Date of Patent: April 15, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Masashi Ohno, Mie Nagao, Hiromichi Kobayashi
  • Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
    Patent number: 6252758
    Abstract: A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.
    Type: Grant
    Filed: July 2, 1999
    Date of Patent: June 26, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Mie Nagao, Ryusuke Ushikoshi, Masashi Ohno
  • Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
    Publication number: 20010002871
    Abstract: A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.
    Type: Application
    Filed: January 26, 2001
    Publication date: June 7, 2001
    Applicant: NGK INSULATORS, LTD.
    Inventors: Mie Nagao, Ryusuke Ushikoshi, Masashi Ohno