Abstract: A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.

Abstract: A method and apparatus is disclosed for polishing a semiconductor wafer. A polishing pad including a first surface and a semiconductor wafer including a second surface are aligned to each other. To allow alignment of an axis of rotation of the surfaces, at least one of the first and second surfaces includes an adjustable axis of rotation. After the axis of rotation of the first and second surfaces is aligned, the adjustable axis of rotation is set, preferably with a magneto-rheological fluid or similarly acting material, to maintain a fixed position. Thereafter, the polishing pad is utilized to polish the semiconductor wafer.

Abstract: CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided. The CMP apparatus includes a first roller situated at a first point and a second roller situated at a second point. The first point is separate from the second point. Also included in the apparatus is a polishing pad strip having a first end secured to the first roller and a second end secured to the second roller. The first roller and the second roller are configured to reciprocate so that the polishing pad strip oscillates at least partially between the first point and the second point.

Abstract: A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

Abstract: CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMIP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.

Abstract: A method and apparatus is disclosed for polishing a semiconductor wafer. A polishing pad including a first surface and a semiconductor wafer including a second surface are aligned to each other. To allow alignment of an axis of rotation of the surfaces, at least one of the first and second surfaces includes an adjustable axis of rotation. After the axis of rotation of the first and second surfaces is aligned, the adjustable axis of rotation is set, preferably with a magneto-rheological fluid or similarly acting material, to maintain a fixed position. Thereafter, the polishing pad is utilized to polish the semiconductor wafer.

Abstract: A method for polishing a semiconductor wafer is provided. The method includes providing a polishing pad strip connected between a first point and a second point and applying a controlled tension to the polishing pad strip. The method also includes oscillating the polishing pad strip between the first point and the second point while applying the controlled tension. Also included in the method is applying the semiconductor wafer to the oscillating polishing pad strip.

Abstract: An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate.

Abstract: CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.

Abstract: CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.

Abstract: An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.

Abstract: A spindle assembly for force controlled operation in applications such as the chemical mechanical planarization of semiconductor wafers includes an axially and rotatably movable spindle driven by a force producing device. The force producing device is controlled by a position feedback loop in a first mode of operation and a spindle force control feedback loop in a second mode of operation so that the same force producing device controls spindle movement in the first mode of operation and maintains a constant pressure on a workpiece based on the detected applied pressure in the second mode of operation.