Patents by Inventor Miguel Angel Sanchez-Garcia

Miguel Angel Sanchez-Garcia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode chip
    Patent number: 9257596
    Abstract: A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light-emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: February 9, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Straβburg, Enrique Calleja-Pardo, Steven Albert, Ana Maria Bengoechea Encabo, Miguel Angel Sanchez-Garcia, Martin Mandl, Christopher Kölper
  • LIGHT-EMITTING DIODE CHIP
    Publication number: 20140353581
    Abstract: A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light- emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.
    Type: Application
    Filed: January 15, 2013
    Publication date: December 4, 2014
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Strassburg, Enrique Calleja-Pardo, Steven Albert, Ana Maria Bengoechea Encabo, Miguel Angel Sanchez-Garcia, Martin Mandl, Christopher Kölper