Abstract: The present disclosure describes optical imaging and optical detection modules that include sensors such as time-of-flight (TOF) sensors. Various implementations are described that, in some instances, can help reduce the amount of optical cross-talk between active detection pixels and reference pixels and/or can facilitate the ability of the sensor to determine an accurate phase difference to be used, for example, in distance calculations.

Abstract: Optoelectronic modules (100) are operable to distinguish between signals indicative of reflections from an object of interest and signals indicative of a spurious reflection. Various modules are operable to recognize spurious reflections by means of dedicated spurious-reflection detection pixels (126) and, in some cases, also to compensate for errors caused by spurious reflections.

Abstract: A novel photo-sensitive element for electronic imaging purposes and, in this context, is particularly suited for time-of-flight 3D imaging sensor pixels. The element enables charge-domain photo-detection and processing based on a single gate architecture. Certain regions for n and p-doping implants of the gates are defined. This kind of single gate architecture enables low noise photon detection and high-speed charge transport methods at the same time. A strong benefit compared to known pixel structures is that no special processing steps are required such as overlapping gate structures or very high-ohmic poly-silicon deposition. In this sense, the element relaxes the processing methods so that this device may be integrated by the use of standard CMOS technology for example. Regarding time-of-flight pixel technology, a major challenge is the generation of lateral electric fields. The element allows the generation of fringing fields and large lateral electric fields.