Abstract: A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

Abstract: Wire removal systems and methods for packaging applications. In some embodiments, a method of manufacturing a module can include providing a packaging substrate including a die mounted on the packaging substrate and a plurality of defective wires coupled to the packaging substrate. The method can include executing in response to a trigger, by an automated wire cutting apparatus without user input, a set of stored instructions to position a wire cutting instrument of the automated wire cutting apparatus and a first defective wire of the plurality of defective wires adjacent to one another, and sequentially detach the plurality of defective wires from the packaging substrate using the wire cutting instrument.

Abstract: A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

Abstract: Wire removal systems and methods for packaging applications. In some embodiments, a method of manufacturing a module can include receiving by an automated wire cutting apparatus a packaging substrate including a die mounted thereon and a defective wire coupled thereto, positioning one or both of a wire cutting instrument of the automated wire cutting apparatus and the packaging substrate relative to the other based on predetermined instructions, and detaching the defective wire from the packaging substrate using the wire cutting instrument.

Abstract: Methods, systems and devices are disclosed for performing a semiconductor processing operation. In some embodiments this includes configuring a wire bonding machine to perform customized movements with a capillary tool of the wire bonding machine, etching bulk contaminants over one or more locations of a semiconductor device with the capillary tool, and applying plasma to the semiconductor device to remove residual contaminants.

Abstract: Methods, systems and devices are disclosed for performing a semiconductor processing operation. In some embodiments this includes configuring a wire bonding machine to perform customized movements with a capillary tool of the wire bonding machine, etching bulk contaminants over one or more locations of a semiconductor device with the capillary tool, and applying plasma to the semiconductor device to remove residual contaminants.

Abstract: A capillary for performing ball bonding includes a body defining a lumen, a first blade defined in a lower tip of the body, and a second blade defined in the lower tip of the body for increasing reliability of a ball bonding procedure performed using the capillary.

Abstract: A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

Abstract: Wire removal systems and methods for packaging applications. In some embodiments, a method of manufacturing a module can include receiving by an automated wire cutting apparatus a packaging substrate including a die mounted thereon and a defective wire coupled thereto, positioning one or both of a wire cutting instrument of the automated wire cutting apparatus and the packaging substrate relative to the other based on predetermined instructions, and detaching the defective wire from the packaging substrate using the wire cutting instrument.

Abstract: Methods, systems and devices are disclosed for performing a semiconductor processing operation. In some embodiments this includes configuring a wire bonding machine to perform customized movements with a capillary tool of the wire bonding machine, etching bulk contaminants over one or more locations of a semiconductor device with the capillary tool, and applying plasma to the semiconductor device to remove residual contaminants.

Abstract: Wire bond strengthening. A method of strengthening a wire bond can include lowering an unthreaded capillary of a wire bonder to a bond strengthening site associated with a bond site of a formed wire bond. The method can further include applying a compressive force between the capillary and the bond strengthening site for a period of time and applying at least one of heat or ultrasonic energy to the bond strengthening site for the period of time. The method can include raising the capillary from the bond strengthening site.