Abstract: Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.

Abstract: Microwave amplifiers tolerant to electrical overstress are provided. In certain embodiments, a monolithic microwave integrated circuit (MMIC) includes a signal pad that receives a radio frequency (RF) signal, a ground pad, a balun including a primary section that receives the RF signal and a secondary section that outputs a differential RF signal, an amplifier that amplifies the differential RF signal, and a plurality of decoupling elements, some of them electrically connected between the primary section and the ground pad, others electrically connected in the secondary section to a plurality of the amplifier's nodes, and operable to protect the amplifier from electrical overstress. Such electrical overstress events can include electrostatic discharge (ESD) events, such as field-induced charged-device model (FICDM) events, as well as other types of overstress conditions.

Abstract: Microwave amplifiers tolerant to electrical overstress are provided. In certain embodiments, a monolithic microwave integrated circuit (MMIC) includes a signal pad that receives a radio frequency (RF) signal, a ground pad, a balun including a primary section that receives the RF signal and a secondary section that outputs a differential RF signal, an amplifier that amplifies the differential RF signal, and a plurality of decoupling elements, some of them electrically connected between the primary section and the ground pad, others electrically connected in the secondary section to a plurality of the amplifier's nodes, and operable to protect the amplifier from electrical overstress. Such electrical overstress events can include electrostatic discharge (ESD) events, such as field-induced charged-device model (FICDM) events, as well as other types of overstress conditions.

Abstract: Techniques to control a capacitive touch screen that decrease processing time and increase noise rejection. The techniques may include injecting a plurality of excitation signals having unique spectral profiles onto conductors of the capacitive touch screen, sampling signals returned from the screen, and determining a location of touch. The techniques may further include injecting a plurality of excitation signals having unique spectral profiles onto adjacent or non-adjacent conductors of the capacitive touch screen. The techniques may further include injecting a plurality of excitation signals having unique spectral profiles onto conductors of the capacitive touch screen in unequal measures. The techniques may also include mapping frequency characteristics of noise present on the capacitive touch screen.

Abstract: Image rejection calibration includes initializing the calibration mode by applying to quadrature mixers, in place of the wanted RF input, an RF source in the frequency range of the wanted RF input, sensing the power output from the poly-phase filter, developing gain adjust and phase adjust correction values in response to the power output and adjusting in accordance with the correction values the gain of the quadrature signals from the quadrature mixers to the poly-phase filter and the phase of local oscillator quadrature signals from the local oscillator to the quadrature mixers to reduce the power output.

Abstract: Embodiments of a system for calibrating the image rejection of a receiver include an image-rejection correction circuit that modifies the gain and phase of a first channel of a baseband image signal. The image-rejection correction circuit may include a summing circuit and first and second variable-gain elements. In one implementation, a filter receives a corrected first channel from the image-rejection correction circuit and an unmodified second channel of the image signal, while a controller analyzes power measured at the output of the filter, and adjusts the variable-gain elements to reduce the power of the image signal.

Abstract: Embodiments of a system for calibrating the image rejection of a receiver include an image-rejection correction circuit that modifies the gain and phase of a first channel of a baseband image signal. The image-rejection correction circuit may include a summing circuit and first and second variable-gain elements. In one implementation, a filter receives a corrected first channel from the image-rejection correction circuit and an unmodified second channel of the image signal, while a controller analyzes power measured at the output of the filter, and adjusts the variable-gain elements to reduce the power of the image signal.

Abstract: Image rejection calibration includes initializing the calibration mode by applying to quadrature mixers, in place of the wanted RF input, an RF source in the frequency range of the wanted RF input, sensing the power output from the poly-phase filter, developing gain adjust and phase adjust correction values in response to the power output and adjusting in accordance with the correction values the gain of the quadrature signals from the quadrature mixers to the poly-phase filter and the phase of local oscillator quadrature signals from the local oscillator to the quadrature mixers to reduce the power output.