Abstract: The present invention may provide an integrated device, which may include a substrate having first and second regions, the first region spaced apart from the second region, a first heterojunction bipolar transistor (HBT) device formed on the first region of the substrate, the first HBT device having a first collector layer formed above the first region of the substrate, the first collector layer having a first collector thickness and a first collector doping level, and a second HBT device formed on the second region of the substrate, the second HBT device having a second collector layer formed above the second region of the substrate, the second collector layer having a second collector thickness and a second collector doping level, the second collector thickness substantially greater than the first collector thickness, the second collector doping level lower than the first collector doping level.

Abstract: An operational amplifier may include a transimpedance input stage. The operational amplifier is capable of self-biasing its input voltage(s) including a first stage, an input source connected to the first stage, an output stage connected to the first stage via feedback resistors, and feedback current sources connected to the first stage, wherein the feedback current sources are set to generate feedback currents flowing from the output stage back to the input stage via the feedback resistors, so as to self-bias the input voltage(s) at the input stage. A method for allowing for an op-amp to self-bias its input voltage(s), including generating feedback currents flowing from the output stage back to the input stage via feedback resistors, so as to self-bias the input voltage(s) at the input stage.

Abstract: An operational amplifier may include a transimpedance input stage. The operational amplifier is capable of self-biasing its input voltage(s) including a first stage, an input source connected to the first stage, an output stage connected to the first stage via feedback resistors, and feedback current sources connected to the first stage, wherein the feedback current sources are set to generate feedback currents flowing from the output stage back to the input stage via the feedback resistors, so as to self-bias the input voltage(s) at the input stage. A method for allowing for an op-amp to self-bias its input voltage(s), including generating feedback currents flowing from the output stage back to the input stage via feedback resistors, so as to self-bias the input voltage(s) at the input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention may provide an integrated device, which may include a substrate having first and second regions, the first region spaced apart from the second region, a first heterojunction bipolar transistor (HBT) device formed on the first region of the substrate, the first HBT device having a first collector layer formed above the first region of the substrate, the first collector layer having a first collector thickness and a first collector doping level, and a second HBT device formed on the second region of the substrate, the second HBT device having a second collector layer formed above the second region of the substrate, the second collector layer having a second collector thickness and a second collector doping level, the second collector thickness substantially greater than the first collector thickness, the second collector doping level lower than the first collector doping level.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: The present invention relates generally to an operational amplifier. In one embodiment, the present invention is an operational amplifier including a transimpedance input stage, the transimpedance input stage including a first stage connected to a first resistor and a second resistor, and an output stage connected to the transimpedance input stage.

Abstract: A mask layer is applied to a surface of a semiconductor structure or a seed layer deposited on the surface. The mask layer has a submicron width opening with a high aspect ratio that exposes a portion of the surface or seed layer. Conductive material is conformed to the opening, for example by plating, to form a first contact on the surface or seed layer. The mask and the top layer of the semiconductor structure, except for the portion under the first contact, are removed to expose a second layer of the semiconductor structure. An insulating layer is formed along the sidewalls of the first contact and the top layer of the semiconductor structure beneath the first contact. A mask is then applied to the second layer and a second contact is formed by selectively depositing metal only on the portion of the second layer exposed by the opening.