Patents by Inventor Miguel Fung

Miguel Fung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145217
    Abstract: Methods for processing a dielectric film to improve its uniformity of thickness and refractive index are disclosed. The dielectric film is deposited using conventional approaches, such as chemical vapor deposition (CVD) or spin coating. The workpiece, with the applied dielectric film is then processed to improve the uniformity of the thickness. This processing may comprise implanting a thinning species to the thicker portions of the dielectric film to reduce the thickness of these portions. The thinning species may be silicon or another suitable species. This processing may alternatively or additionally include implanting a thickening species to the thinner portions of the dielectric film to increase their thickness. The thickening species may be helium or another suitable species. This approach may reduce the variation in thickness by 50% or more.
    Type: Application
    Filed: November 2, 2022
    Publication date: May 2, 2024
    Inventors: Qintao Zhang, Eric Jay Simmons, JR., Jared Traynor, Wei Zou, Miguel Fung, Samphy Hong
  • Patent number: 6927178
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: August 9, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
  • Publication number: 20040214446
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Application
    Filed: December 10, 2003
    Publication date: October 28, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu