Patents by Inventor Miguel GARCIA GRANDA
Miguel GARCIA GRANDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11385554Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.Type: GrantFiled: June 28, 2019Date of Patent: July 12, 2022Assignee: ASML Netherlands B.V.Inventors: Miguel Garcia Granda, Steven Erik Steen, Eric Jos Anton Brouwer, Bart Peter Bert Segers, Pierre-Yves Jerome Yvan Guittet, Frank Staals, Paulus Jacobus Maria Van Adrichem
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Patent number: 10895811Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.Type: GrantFiled: October 11, 2019Date of Patent: January 19, 2021Assignee: ASML Netherlands B.V.Inventors: Miguel Garcia Granda, Elliott Gerard Mc Namara, Pierre-Yves Jerome Yvan Guittet, Eric Jos Anton Brouwer, Bart Peter Bert Segers
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Patent number: 10871716Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.Type: GrantFiled: August 23, 2019Date of Patent: December 22, 2020Assignee: ASML Netherlands B.V.Inventors: Miguel Garcia Granda, Christian Marinus Leewis, Frank Staals
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Publication number: 20200117101Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.Type: ApplicationFiled: October 11, 2019Publication date: April 16, 2020Applicant: ASML Netherlands B.V.Inventors: Miguel GARCIA GRANDA, Elliott Gerard MC NAMARA, Pierre-Yves Jerome Yvan GUITTET, Eric Jos Anton BROUWER, Bart Peter Bert SEGERS
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Patent number: 10571812Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.Type: GrantFiled: July 26, 2018Date of Patent: February 25, 2020Assignee: ASML Netherlands B.V.Inventors: Fahong Li, Miguel Garcia Granda, Carlo Cornelis Maria Luijten, Bart Peter Bert Segers, Cornelis Andreas Franciscus Johannes Van Der Poel, Frank Staals, Anton Bernhard Van Oosten, Mohamed Ridane
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Publication number: 20200026182Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.Type: ApplicationFiled: June 28, 2019Publication date: January 23, 2020Applicant: ASML Netherlands B.V.Inventors: Miguel GARCIA GRANDA, Steven Erik STEEN, Eric Jos Anton BROUWER, Bart Peter Bert SEGERS, Pierre-Yves Jerome Yvan GUITTET, Frank STAALS, Paulus Jacobus Maria VAN ADRICHEM
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Publication number: 20190377264Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.Type: ApplicationFiled: August 23, 2019Publication date: December 12, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Miguel GARCIA GRANDA, Christian Marinus LEEWIS, Frank STAALS
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Patent number: 10394132Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.Type: GrantFiled: April 24, 2017Date of Patent: August 27, 2019Assignee: ASML Netherlands B.V.Inventors: Miguel Garcia Granda, Christian Marinus Leewis, Frank Staals
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Publication number: 20190129319Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.Type: ApplicationFiled: April 24, 2017Publication date: May 2, 2019Inventors: Miguel GARCIA GRANDA, LEEWIS Marinus Christian, Frank STAALS
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Publication number: 20190056673Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIG. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIG. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.Type: ApplicationFiled: July 26, 2018Publication date: February 21, 2019Applicant: ASML Netherlands B.V.Inventors: Fahong LI, Miguel GARCIA GRANDA, Carlo Cornells Marla LUIJTEN, Bart Peter Bert SEGERS, Cornelis Andreas Franciscus Johannes VAN DER POEL, Frank STAALS, Anton Bernhard VAN OOSTEN, Mohamed RiDANE
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Patent number: 9518936Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions.Type: GrantFiled: October 30, 2013Date of Patent: December 13, 2016Assignee: ASML Netherlands B.V.Inventors: Willem Jan Grootjans, Henricus Johannes Lambertus Megens, Jouke Krist, Miguel Garcia Granda, Lu Xu
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Publication number: 20150308966Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions.Type: ApplicationFiled: October 30, 2013Publication date: October 29, 2015Applicant: ASML Nertherlands B.VInventors: Willem Jan GROOTJANS, Henricus Johannes Lambertu MEGENS, Jouke KRIST, Miguel GARCIA GRANDA, Lu XU