Abstract: A non-reciprocal coupler isolator is provided including a first waveguide. The first waveguide includes a magnetic cladding cover layer magnetized transversely to a propagation direction of the first waveguide. A second waveguide is positioned adjacent to the first waveguide and separated by a gap. The second waveguide includes a non-magnetic cladding cover layer with a refractive index that matches a refractive index of the magnetic cladding cover layer of the first waveguide.

Abstract: A non-reciprocal coupler isolator is provided including a first waveguide. The first waveguide includes a magnetic cladding cover layer magnetized transversely to a propagation direction of the first waveguide. A second waveguide is positioned adjacent to the first waveguide and separated by a gap. The second waveguide includes a non-magnetic cladding cover layer with a refractive index that matches a refractive index of the magnetic cladding cover layer of the first waveguide.

Abstract: A latching magnetic structure in the resonant cavity of magneto-photonic crystal films with in-plane magnetization. Also disclosed is a method for the fabrication and observation of a latching magnetic structure.

Abstract: A magneto-optical isolator (20) for an optical circuit. The isolator includes a substrate, and an optical channel (350) disposed next to the substrate. The optical channel and substrate are configured to transmit optical radiation within the optical channel. The isolator further includes a photonic-crystal rotator (24) formed with the substrate and the optical channel. The rotator has at least one defect (52) and magnetic (M) and non-magnetic (N) materials.

Abstract: A device and method for optical isolation for use in optical systems is disclosed. The device provides for a waveguide optical isolator fabricated using two arms, made of optical waveguides comprising magneto-optical material, in a Mach-Zehnder interferometer configuration. The device of the present invention operates using the TM mode of a light wave and, thus, does not require phase-matching of TM and TE modes. Further, the present invention does not use polarizers to extinguish the optical feed-back.

Abstract: An actuator including a piezoelectric film. The film has a first side, a second side, and a thickness between the first side and the second side. The actuator also includes a first electrode adjacent to the first side of the film, and a second electrode adjacent to the second side of the film. The first electrode and the second electrode are configured to establish an electric field gradient across the thickness of the film when the first electrode and the second electrode are energized. The gradient causes deflection of the film. The gradient includes a difference between a field component substantially near the first side of the film and a field component substantially near the second side of the film.

Abstract: A magneto-optical isolator (20) for an optical circuit. The isolator includes a substrate, and an optical channel (350) disposed next to the substrate. The optical channel and substrate are configured to transmit optical radiation within the optical channel. The isolator further includes a photonic-crystal rotator (24) formed with the substrate and the optical channel. The rotator has at least one defect (52) and magnetic (M) and non-magnetic (N) materials.

Abstract: A device and method for optical isolation for use in optical systems is disclosed. The device provides for a waveguide optical isolator fabricated using two arms, made of optical waveguides comprising magneto-optical material, in a Mach-Zehnder interferometer configuration. The device of the present invention operates using the TM mode of a light wave and, thus, does not require phase-matching of TM and TE modes. Further, the present invention does not use polarizers to extinguish the optical feedback.

Abstract: A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

Abstract: A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.

Abstract: In a polarization rotator device, a thin-film magneto-optic medium is magnetized by a thin-film magnet. To serve as an optical isolator, the device may include polarizers. In such an optical isolator, in which the magneto-optic medium was formed as a Bi-YIG triple-layer structure, and the thin-film magnet as a single-crystal iron-cobalt layer, an extinction ratio better than -20 dB was realized.