Patents by Inventor Miha Filipic

Miha Filipic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of patterning an amorphous semiconductor layer
    Patent number: 10326031
    Abstract: Methods of patterning an amorphous semiconductor layer according to a predetermined pattern via laser ablation with a pulsed laser having a laser wavelength are disclosed. In one aspect, a method may include providing the amorphous semiconductor layer on a substrate, providing a distributed Bragg reflector on the amorphous semiconductor layer, wherein the distributed Bragg reflector is reflective at the laser wavelength, providing an absorbing layer on the distributed Bragg reflector, wherein the absorbing layer is absorptive at the laser wavelength, patterning the absorbing layer by laser ablation, in accordance with the predetermined pattern, patterning the distributed Bragg reflector by performing an etching step using the patterned absorbing layer as an etch mask, and etching the amorphous semiconductor layer using the patterned distributed Bragg reflector as an etch mask.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: June 18, 2019
    Assignees: IMEC vzw, Katholieke Universiteit Leuven
    Inventors: Menglei Xu, Miha Filipic, Twan Bearda
  • METHOD OF PATTERNING AN AMORPHOUS SEMICONDUCTOR LAYER
    Publication number: 20180122963
    Abstract: Methods of patterning an amorphous semiconductor layer according to a predetermined pattern via laser ablation with a pulsed laser having a laser wavelength are disclosed. In one aspect, a method may include providing the amorphous semiconductor layer on a substrate, providing a distributed Bragg reflector on the amorphous semiconductor layer, wherein the distributed Bragg reflector is reflective at the laser wavelength, providing an absorbing layer on the distributed Bragg reflector, wherein the absorbing layer is absorptive at the laser wavelength, patterning the absorbing layer by laser ablation, in accordance with the predetermined pattern, patterning the distributed Bragg reflector by performing an etching step using the patterned absorbing layer as an etch mask, and etching the amorphous semiconductor layer using the patterned distributed Bragg reflector as an etch mask.
    Type: Application
    Filed: November 3, 2017
    Publication date: May 3, 2018
    Inventors: Menglei Xu, Miha Filipic, Twan Bearda