Abstract: The semiconductor light emitting element may include a light emitting layer having a first region and a second region surrounding the first region, a passivation layer surrounding a lateral part of the light emitting layer, an insulating layer under the first region, a first electrode under the light emitting layer, and a second electrode on the light emitting layer. The first electrode may include a reflective layer having a shape corresponding to a shape of the insulating layer under the insulating layer, and an ohmic contact layer under the second region.

Abstract: The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer. The adsorption prevention layer can include Alx1Ga(1-x1)InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 ?m or less.

Abstract: A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer. The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.

Abstract: The display device may include a substrate, a first assembly wiring and a second assembly wiring on the substrate, a partition wall having an assembly hole on the first assembly wiring and the second assembly wiring, a semiconductor light-emitting element having a recess and seated on the protruding part, and a connecting electrode on a lower side of the semiconductor light-emitting element.

Abstract: A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

Abstract: Discussed is a semiconductor light emitting device can include a light emitting layer, a passivation layer on an upper surface and a side surface of the light emitting layer, a protective layer on a lower surface and the side surface of the light emitting layer, a first electrode between the light emitting layer and the protective layer, and a second electrode between the light emitting layer and the passivation layer. An inner angle between the side surface and the lower surface of the light emitting layer can have an obtuse angle.

Abstract: A display device, according to the present invention, comprises a red semiconductor light-emitting element, a green semiconductor light-emitting element and a blue semiconductor light-emitting element, and comprises: a substrate on which the red, green and blue semiconductor light-emitting elements are arranged; and receiving holes which are formed on the substrate and in which the red, green and blue semiconductor light-emitting elements are assembled, wherein the red, green and blue semiconductor light-emitting elements each comprise a tip on a side surface thereof, such that at least any one among the angle formed by the tip and the thickness of one side with respect to the tip is formed so as to be different.

Abstract: The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer. The adsorption prevention layer can include Alx1Ga(1-x1)InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 ?m or less.

Abstract: A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer. The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.

Abstract: A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

Abstract: A display device, according to the present invention, comprises: semiconductor light-emitting devices; and a substrate on which the semiconductor light-emitting devices are received, and which comprises wiring electrodes electrically connected to the semiconductor light-emitting devices. The substrate comprises: a base part; assembly electrodes disposed on the base part so as to extend in one direction; a dielectric layer formed so as to cover the assembly electrodes; and a partition part formed on the dielectric layer and forming cells in which the semiconductor light-emitting devices are seated, wherein the partition part comprises a first partition part formed from metal material, and a second partition part formed from insulating material, and the first partition part and second partition part comprise a micropattern.

Abstract: Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

Abstract: A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

Abstract: Disclosed is a solar cell. The solar cell includes a semiconductor substrate, conductivity-type regions located in or on the semiconductor substrate, electrodes conductively connected to the conductivity-type regions, and insulating films located on at least one of opposite surfaces of the semiconductor substrate, and including a first film and a second film located on the first film, the second film has a higher carbon content than that of the first film, a refractive index of the second film is equal to or less than a refractive index of the first film, and an extinction coefficient of the second film is equal to or greater than an extinction coefficient of the first film.

Abstract: A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

Abstract: A display device can include a plurality of semiconductor light emitting diodes; first and second wiring electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes; a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode that generate an electric field when a current is supplied thereto; a dielectric layer disposed to cover the plurality of pair electrodes; and a covalent bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes, and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes, wherein the first wiring electrode and the second wiring electrode are located at opposite sides of the plurality of pair electrodes based on the plurality of semiconductor light emitting diodes.

Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.

Abstract: A solar cell includes a substrate of a first conductive type, a first doped region positioned at a first surface of the substrate and contains impurities of a second conductive type different from the first conductive type, and a first electrode part electrically connected to the first doped region. The first electrode part includes a thermosetting resin, and first and second conductive particles distributed in the thermosetting resin. The second conductive particles have a work function greater than the first conductive particles and form silicide at an interface contacting the first doped region.

Abstract: A display device can include a plurality of semiconductor light emitting diodes; first and second wiring electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes; a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode that generate an electric field when a current is supplied thereto; a dielectric layer disposed to cover the plurality of pair electrodes; and a covalent bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes, and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes, wherein the first wiring electrode and the second wiring electrode are located at opposite sides of the plurality of pair electrodes based on the plurality of semiconductor light emitting diodes.

Abstract: Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline semiconductor layer over the protective-film layer, a first conductive area formed by selectively doping the semiconductor layer with a first conductive dopant, a second conductive area doped with a second conductive dopant and located between neighboring portions of the first conductive area, an undoped barrier area located between the first conductive area and the second conductive area, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. Each of the first conductive area and the second conductive area includes a second crystalline area having a crystalline structure different from that of the barrier area, and the second crystalline areas of the first and second conductive areas include a second polycrystalline area and a fourth crystalline area having different depths.