Abstract: A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an electrode layer filling the first and second openings to be electrically connected to the first conductive type semiconductor layer, electrode pads electrically connected to the metal layer, spaced apart along a first direction at first and second corners of the light emitting structure, in which the first openings are arranged along a second direction, and the second openings are arranged along a third direction crossing the first direction, and at least one of the first and second openings filled with the electrode layer is disposed at an intersection of the second and third directions.

Abstract: A memory system includes a plurality of memory devices including first and second memory devices and a controller coupled to the plurality of memory devices to control operations performed on the plurality of memory devices. Each of the first and second memory devices includes a plurality of memory blocks, and memory blocks of the first and second memory devices form superblocks. The superblocks include a first superblock that includes memory blocks of the first and second memory devices and a second superblock that includes memory blocks of the first and second memory devices. The controller includes a first core unit and a second core unit configured to perform a first search operation and a second search operation, respectively, wherein the first and second search operations are performed in parallel.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: A memory system includes a plurality of memory devices including first and second memory devices and a controller coupled to the plurality of memory devices to control operations performed on the plurality of memory devices. Each of the first and second memory devices includes a plurality of memory blocks, and memory blocks of the first and second memory devices form superblocks. The superblocks include a first superblock that includes memory blocks of the first and second memory devices and a second superblock that includes memory blocks of the first and second memory devices. The controller includes a first core unit and a second core unit configured to perform a first search operation and a second search operation, respectively, wherein the first and second search operations are performed in parallel.

Abstract: A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an electrode layer filling the first and second openings to be electrically connected to the first conductive type semiconductor layer, electrode pads electrically connected to the metal layer, spaced apart along a first direction at first and second corners of the light emitting structure, in which the first openings are arranged along a second direction, and the second openings are arranged along a third direction crossing the first direction, and at least one of the first and second openings filled with the electrode layer is disposed at an intersection of the second and third directions.

Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

Abstract: A memory controller for controlling a memory device including memory blocks is provided. The memory controller includes: a garbage collection state determiner in communication with a host device and configured to receive a garbage collection state request from the host device and determine whether the memory device is in a state that garbage collection is necessary and a block information storage unit in communication with the garbage collection state determiner and configured to receive, from the memory device, bad block generation information including a number of bad blocks included in the memory device that are unable to store data, and store block information including a total number of the memory blocks, the number of bad blocks, and a number of free blocks included in the memory device that are assigned for garbage collection.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: A memory controller for controlling a memory device including memory blocks is provided. The memory controller includes: a garbage collection state determiner in communication with a host device and configured to receive a garbage collection state request from the host device and determine whether the memory device is in a state that garbage collection is necessary and a block information storage unit in communication with the garbage collection state determiner and configured to receive, from the memory device, bad block generation information including a number of bad blocks included in the memory device that are unable to store data, and store block information including a total number of the memory blocks, the number of bad blocks, and a number of free blocks included in the memory device that are assigned for garbage collection.

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove.

Abstract: A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a>b.

Abstract: A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a>b.

Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.

Abstract: There is provided a chip type laminated capacitor including: a ceramic body formed by laminating a dielectric layer having a thickness equal to 10 or more times an average particle diameter of a grain included therein and being 3 ?m or less; first and second outer electrodes; a first inner electrode having one end forming a first margin together with one end surface of the ceramic body at which the second outer electrode is formed and the other end leading to the first outer electrode; and a second inner electrode having one end forming a second margin together with the other end surface of the ceramic body at which the first outer electrode is formed and the other end leading to the second outer electrode, wherein the first and second margins have different widths under a condition that they are 200 ?m or less.