Abstract: Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

Abstract: A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.

Abstract: Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

Abstract: Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

Abstract: Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y<(X?0.01). The resistive switching layers may be formed using Atomic Layer Deposition (ALD).

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract: Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Provided are test vehicles for evaluating various semiconductor materials. These materials may be used for various integrated circuit components, such as embedded resistors of resistive random access memory cells. Also provided are methods of fabricating and operating these test vehicles. A test vehicle may include two stacks protruding through an insulating body. Bottom ends of these stacks may include n-doped poly-silicon and may be interconnected by a connector. Each stack may include a titanium nitride layer provided over the poly-silicon end, followed by a titanium layer over the titanium nitride layer and a noble metal layer over the titanium layer. The noble metal layer extends to the top surface of the insulating body and forms a contact surface. The titanium layer may be formed in-situ with the noble metal layer to minimize oxidation of the titanium layer, which is used as an adhesion and oxygen getter.

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.