Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and AD converting unit. In the AD converting unit, a plurality of AD converts are arranged in a horizontal direction. The pixel is configured by a small pixel group. The small pixel group is formed of a plurality of small pixels. The plurality of small pixels read out the signal charges. The small pixel group includes two or more small pixels having different optical sensitivities. The solid-state imaging device includes N AD converting units. N is the number of small pixel groups which are arranged in a vertical direction at every small pixel. N is an integer of 2 or higher.

Abstract: According to one embodiment, a solid state imaging device includes a first image sensor, a second image sensor, and an imaging processing circuit. A plurality of photoelectric conversion units are arranged in each of the first image sensor and the second image sensor. All of the photoelectric conversion units are configured to include pixels with different charge storage times. The imaging processing circuit includes an output combining unit. The output combining unit combines outputs by the pixels with different charge storage times with respect to each of the photoelectric conversion units.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and a high dynamic range (HDR) synthesizing circuit 19. A pixel is configured as a small pixel group. The HDR synthesizing circuit 19 includes a valid pixel selecting unit 34, a sensitivity ratio correcting unit 35, and a calculation processing unit 36. The valid pixel selecting unit 34 selects one or more small pixels validating a use of a signal value in the HDR synthesis as a valid pixel from among the small pixel group. The sensitivity ratio correcting unit 35 executes sensitivity ratio correction on the signal value of each small pixel. The calculation processing unit 36 uses the signal value of the valid pixel among the signal values of the small pixels from the sensitivity ratio correcting unit 35 for a calculation for the HDR synthesis.

Abstract: According to one embodiment, in the pixel array unit, pixels that accumulate photoelectrically converted electrical charge are arranged in a matrix state. The m address lines (m is an integer of two or more) are provided per row of the pixel array unit and select the pixel in a row direction. The vertical signal line transmits a pixel signal, which is read from the pixel, in a column direction.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and a high dynamic range (HDR) synthesizing circuit 19. A pixel is configured as a small pixel group. The HDR synthesizing circuit 19 includes a valid pixel selecting unit 34, a sensitivity ratio correcting unit 35, and a calculation processing unit 36. The valid pixel selecting unit 34 selects one or more small pixels validating a use of a signal value in the HDR synthesis as a valid pixel from among the small pixel group. The sensitivity ratio correcting unit 35 executes sensitivity ratio correction on the signal value of each small pixel. The calculation processing unit 36 uses the signal value of the valid pixel among the signal values of the small pixels from the sensitivity ratio correcting unit 35 for a calculation for the HDR synthesis.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and AD converting unit. In the AD converting unit, a plurality of AD converts are arranged in a horizontal direction. The pixel is configured by a small pixel group. The small pixel group is formed of a plurality of small pixels. The plurality of small pixels read out the signal charges. The small pixel group includes two or more small pixels having different optical sensitivities. The solid-state imaging device includes N AD converting units. N is the number of small pixel groups which are arranged in a vertical direction at every small pixel. N is an integer of 2 or higher.

Abstract: According to one embodiment, a solid state imaging device includes a first image sensor, a second image sensor, and an imaging processing circuit. A plurality of photoelectric conversion units are arranged in each of the first image sensor and the second image sensor. All of the photoelectric conversion units are configured to include pixels with different charge storage times. The imaging processing circuit includes an output combining unit. The output combining unit combines outputs by the pixels with different charge storage times with respect to each of the photoelectric conversion units.