Abstract: A mobile communication system capable of easily notifying the interference-related information and avoiding interference in a situation in which a macro cell and local nodes are deployed to coexist. In the system, a macro cell (eNB) notifies, via user equipments (UEs) present in a coverage, HeNBs present in the coverage of the interference-related information related to the interference to a physical resource to be used, for example, a high interference indication (HII) and an overload indicator (OI).

Abstract: Provided is a communication system that can be normally and efficiently operated in the case where existing carriers and new carrier types coexist. A base station device and a communication terminal device are configured to perform communication in cells of legacy carriers LC1 to LC3 being existing carriers. When the base station device starts operating new carrier types NCT1 and NCT2, the NCT1 and NCT2 are associated with legacy carriers belonging to the same frequency band. For example, the NCT2 is associated with the LC2 or the LC3 and is not associated with the LC1. The legacy carriers LC1 to LC3 associated with the NCT1 and the NCT2 notify the communication terminal device of the information on the NCT1 and NCT2. This allows the communication terminal device to communicate with the NCT1 and the NCT2.

Abstract: For a Hall element of a magnetic sensor, a current is caused to pass along a +X-direction and a first voltage is measured in a +Y-direction, a current is caused to pass along the +Y-direction and a second voltage is measured in the +X-direction, a current is caused to pass along a ?X-direction and a third voltage is measured in the +Y-direction, and a current is caused to pass along a ?Y-direction and a fourth voltage is measured in the +X-direction. Then, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the first voltage and a value of the second voltage, and the result is compared with a reference value. Furthermore, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the third voltage and a value of the fourth voltage, and the result is compared with the reference value.

Abstract: For a Hall element of a magnetic sensor, a current is caused to pass along a +X-direction and a first voltage is measured in a +Y-direction, a current is caused to pass along the +Y-direction and a second voltage is measured in the +X-direction, a current is caused to pass along a ?X-direction and a third voltage is measured in the +Y-direction, and a current is caused to pass along a ?Y-direction and a fourth voltage is measured in the +X-direction. Then, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the first voltage and a value of the second voltage, and the result is compared with a reference value. Furthermore, a calculation is performed which strengthens effects of Hall voltage mutually and weakens effects of offset voltage mutually based on a value of the third voltage and a value of the fourth voltage, and the result is compared with the reference value.

Abstract: A semiconductor package includes: a semiconductor chip and a plurality of frames. A plurality of electrodes are formed on a surface of the semiconductor chip. The plurality of frames are connected to the plurality of electrodes. The plurality of frames are formed by dividing one conductive plate by etching.