Abstract: A composition containing a p-type semiconductor material and an n-type semiconductor material, an insulating material; and a solvent, wherein the n-type semiconductor material contains a non-fullerene compound, the insulating material is preferably a material that dissolves in an amount of 0.1 wt % or more at 25° C. in a solvent, preferably contains a polymer containing a constituent unit represented by Formula (I): wherein Ri1 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 20 carbon atoms, and Ri2 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms, a group represented by the following Formula (II-1), a group represented by the following Formula (II-2), or a group represented by the following Formula (II-3).

Abstract: Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of ?5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.

Abstract: A photodetector element includes: an anode; a cathode; and an active layer provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, and a value obtained by subtracting the absolute value of energy level of HOMO of the p-type semiconductor material from the absolute value of the energy level of HOMO of the n-type semiconductor material is 0.35 or less. Further, the difference between the HOMO of the n-type semiconductor material and the HOMO of the p-type semiconductor material is preferably 0 to 0.10 eV, and the p-type semiconductor material is preferably a polymer compound containing a constituent unit represented by the following Formula (I). Ar1 and Ar2 represent a trivalent aromatic heterocyclic group optionally having a substituent or a trivalent aromatic carbocyclic group optionally having a substituent, and Z represents a group represented by Formulae (Z-1) to (Z-7).

Abstract: To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (?EA+?EB) of a sum of a value (?EA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (?EB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.

Abstract: The present disclosure relates to a laminated body including at least a base material layer containing at least a flexible base material and an inorganic thin film layer, in which a distribution curve of IO2/ISi has at least one maximum value (IO2/ISi)maxBD in a region BD between a depth B and a depth D, where ionic strengths of Si?, C?, and O2? are each denoted as ISi, IC, and IO2 in a depth profile measured from a surface of the laminated body on an inorganic thin film layer side in a thickness direction using a time-of-flight secondary ion mass spectrometer (TOF-SIMS), an average ionic strength in a region A1 in which an absolute value of a coefficient of variation of an ionic strength value on a base material layer side is within 5% is denoted as ICA1, a depth that is closest to the region A1 on a surface side of the inorganic thin film layer with respect to the region A1 and exhibits an ionic strength to be 0.

Abstract: An object of the present invention is to provide a gas barrier film which exhibits excellent gas barrier property and flexibility and suppresses the decreases in adhesive property between layers and optical properties under high humidity conditions. A gas barrier film including at least a substrate layer including at least a flexible substrate, an undercoat layer, and an inorganic thin film layer in this order, in which a water vapor transmission rate through the gas barrier film at 23° C. and 50% RH is 0.001 g/m2/day or less and a number of durability N measured by performing a steel wool test of an outermost surface on an inorganic thin film layer side of the gas barrier film using #0000 steel wool under conditions of a load of 50 gf/cm2, a speed of 60 rpm/min, and a one-way distance of 3 cm satisfies Formula (1): N?200??(1).