Abstract: A storage facility for semiconductor containers is provided. The storage structure has partitioning walls including a side wall portion extending along a vertical direction, and holding space partitioned off from exterior space by the partitioning walls. Inactive gas enriched air, which contains higher concentration of inactive gas than concentration of inactive gas contained in air in the exterior space, is supplied to the holding space. A first opening for allowing containers being carried into and out of the storage structure to be moved through the side wall portion is formed in the side wall portion. A first inlet opening is located at a position in the exterior space and adjacent an edge of the first opening. A first drawing-in device is provided to discharge air drawn in through the first inlet opening into discharge space which is outside the holding space and is divided off from the exterior space.

Abstract: A storage facility for semiconductor containers is provided. The storage structure has partitioning walls including a side wall portion extending along a vertical direction, and holding space partitioned off from exterior space by the partitioning walls. Inactive gas enriched air, which contains higher concentration of inactive gas than concentration of inactive gas contained in air in the exterior space, is supplied to the holding space. And a first opening for allowing containers being carried into and out of the storage structure to be moved through the side wall portion is formed in the side wall portion. A first inlet opening is located at a position which is in the exterior space and is adjacent an edge of the first opening. And a first drawing-in device is provided in the storage structure to discharge air drawn in through the first inlet opening into discharge space which is outside the holding space and is divided off from the exterior space.