Patents by Inventor Miia Mäntymäki

Miia Mäntymäki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vapor deposition of LiF thin films
    Patent number: 9909211
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: March 6, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • VAPOR DEPOSITION OF LiF THIN FILMS
    Publication number: 20160369397
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 22, 2016
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of aluminum fluoride thin films
    Patent number: 9394609
    Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: July 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Mikko Ritala, Markku Leskelä
  • Vapor deposition of LiF thin films
    Patent number: 9382615
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: July 5, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • ATOMIC LAYER DEPOSITION OF ALUMINUM FLUORIDE THIN FILMS
    Publication number: 20150225853
    Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 13, 2015
    Inventors: Miia Mäntymäki, Mikko Ritala, Markku Leskelä
  • VAPOR DEPOSITION OF LiF THIN FILMS
    Publication number: 20140106070
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Application
    Filed: March 13, 2013
    Publication date: April 17, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä