Patents by Inventor Miin-Jang Chen

Miin-Jang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device
    Publication number: 20030116793
    Abstract: A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.
    Type: Application
    Filed: June 19, 2002
    Publication date: June 26, 2003
    Inventors: Miin-Jang Chen, Ching-Fuh Lin, Chee-Wee Liu, Min-Hung Lee, Shu-Tong Chang