Patents by Inventor Mika Ebihara

Mika Ebihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10504957
    Abstract: A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in a vertical cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. A gap is formed between the semiconductor substrate and the portion of the magnetic body that is substantially parallel to the semiconductor substrate, and the gap lies above the entire top surfaces of the Hall elements. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: December 10, 2019
    Assignee: ABLIC Inc.
    Inventors: Matsuo Kishi, Miei Takahama (nee Sato), Hiroshi Takahashi, Mika Ebihara, Takaaki Hioka
  • Patent number: 10429453
    Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the magnetic flux converging plate by electroplating on a base conductive layer formed on a plating substrate prepared separately from the semiconductor substrate, application of an adhesive for forming the adhesive layer onto a surface of the magnetic flux converging plate so that the magnetic flux converging plate adheres to the back surface of the semiconductor substrate, and peeling off of the plating substrate afterward from the base conductive layer formed on the magnetic flux converging plate.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: October 1, 2019
    Assignee: ABLIC INC.
    Inventors: Takaaki Hioka, Mika Ebihara, Hiroshi Takahashi, Matsuo Kishi, Miei Takahama
  • Patent number: 10290677
    Abstract: A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: May 14, 2019
    Assignee: ABLIC Inc.
    Inventors: Matsuo Kishi, Miei Takahama (nee Sato), Hiroshi Takahashi, Mika Ebihara, Takaaki Hioka
  • Patent number: 10263177
    Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: April 16, 2019
    Assignee: ABLIC INC.
    Inventors: Takaaki Hioka, Mika Ebihara
  • Patent number: 10263176
    Abstract: A vertical Hall element having an improved sensitivity and reduced offset voltage includes: a second conductivity type semiconductor layer formed on a semiconductor substrate and having an impurity concentration that is distributed uniformly; a second conductivity type impurity diffusion layer formed on the semiconductor layer and having a concentration higher than in the semiconductor layer; a plurality of electrodes formed in a straight line on a surface of the impurity diffusion layer, and each formed from a second conductivity type impurity region that is higher in concentration than the impurity diffusion layer; and a plurality of first conductivity type electrode isolation diffusion layers each formed between two electrodes out of the plurality of electrodes on the surface of the impurity diffusion layer, to isolate the plurality of electrodes from one another.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 16, 2019
    Assignee: ABLIC INC.
    Inventors: Takaaki Hioka, Mika Ebihara
  • Patent number: 10205087
    Abstract: A semiconductor device has a magnetic sensor configured to detect a direction of magnetism. The magnetic sensor includes Hall elements arranged on a surface of a semiconductor substrate, and a magnetic flux concentrator formed of a magnetic material having the function of amplifying magnetism. The magnetic flux concentrator is arranged on the semiconductor substrate and at least partly covers each of the Hall elements. A slit or a slot is formed in the magnetic material to inhibit generation of stress applied to the Hall elements.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: February 12, 2019
    Assignee: ABLIC INC.
    Inventor: Mika Ebihara
  • Patent number: 10062836
    Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the base conductive layer on the back surface of the semiconductor substrate, formation of a resist on the base conductive layer having an opening for forming the magnetic flux converging plate, formation of the magnetic flux converging plate in the opening of the resist by electroplating, removal of the resist, and removal of a part of the base conductive layer by etching with the magnetic flux converging plate as a mask.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: August 28, 2018
    Assignee: ABLIC INC.
    Inventors: Takaaki Hioka, Mika Ebihara, Hiroshi Takahashi, Matsuo Kishi, Miei Takahama
  • Patent number: 10060991
    Abstract: Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: August 28, 2018
    Assignee: ABLIC INC.
    Inventors: Takaaki Hioka, Mika Ebihara
  • Publication number: 20180203078
    Abstract: Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.
    Type: Application
    Filed: November 16, 2017
    Publication date: July 19, 2018
    Inventors: Takaaki HIOKA, Mika EBIHARA
  • Publication number: 20180182955
    Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.
    Type: Application
    Filed: November 16, 2017
    Publication date: June 28, 2018
    Inventors: Takaaki HIOKA, Mika EBIHARA
  • Publication number: 20180159025
    Abstract: A vertical Hall element having an improved sensitivity and reduced offset voltage includes: a second conductivity type semiconductor layer formed on a semiconductor substrate and having an impurity concentration that is distributed uniformly; a second conductivity type impurity diffusion layer formed on the semiconductor layer and having a concentration higher than in the semiconductor layer; a plurality of electrodes formed in a straight line on a surface of the impurity diffusion layer, and each formed from a second conductivity type impurity region that is higher in concentration than the impurity diffusion layer; and a plurality of first conductivity type electrode isolation diffusion layers each formed between two electrodes out of the plurality of electrodes on the surface of the impurity diffusion layer, to isolate the plurality of electrodes from one another.
    Type: Application
    Filed: November 9, 2017
    Publication date: June 7, 2018
    Inventors: Takaaki HIOKA, Mika EBIHARA
  • Patent number: 9841471
    Abstract: A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: December 12, 2017
    Assignee: SII Semiconductor Corporation
    Inventors: Takaaki Hioka, Mika Ebihara
  • Publication number: 20170294577
    Abstract: Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die pad of a package on which a semiconductor substrate having Hall elements, a circuit, and the like is to be arranged, the magnetic converging plate manufactured through processes different from those of the semiconductor substrate on which the Hall elements and the circuit are formed is inserted into the magnetic converging plate holder, and the semiconductor substrate having the Hall elements, the circuit, and the like is arranged on the resultant so that a back surface thereof faces the die pad and the magnetic converging plate.
    Type: Application
    Filed: June 22, 2017
    Publication date: October 12, 2017
    Inventors: Takaaki HIOKA, Mika EBIHARA
  • Publication number: 20170271400
    Abstract: A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 21, 2017
    Inventors: Matsuo KISHI, Miei TAKAHAMA (nee SATO), Hiroshi TAKAHASHI, Mika EBIHARA, Takaaki HIOKA
  • Publication number: 20170269169
    Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the magnetic flux converging plate by electroplating on a base conductive layer formed on a plating substrate prepared separately from the semiconductor substrate, application of an adhesive for forming the adhesive layer onto a surface of the magnetic flux converging plate so that the magnetic flux converging plate adheres to the back surface of the semiconductor substrate, and peeling off of the plating substrate afterward from the base conductive layer formed on the magnetic flux converging plate.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 21, 2017
    Inventors: Takaaki HIOKA, Mika EBIHARA, Hiroshi TAKAHASHI, Matsuo KISHI, Miei TAKAHAMA
  • Publication number: 20170271401
    Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical-cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 21, 2017
    Inventors: Matsuo KISHI, Miei TAKAHAMA (nee SATO), Hiroshi TAKAHASHI, Mika EBIHARA, Takaaki HIOKA
  • Publication number: 20170271575
    Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the base conductive layer on the back surface of the semiconductor substrate, formation of a resist on the base conductive layer having an opening for forming the magnetic flux converging plate, formation of the magnetic flux converging plate in the opening of the resist by electroplating, removal of the resist, and removal of a part of the base conductive layer by etching with the magnetic flux converging plate as a mask.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 21, 2017
    Inventors: Takaaki HIOKA, Mika EBIHARA, Hiroshi TAKAHASHI, Matsuo KISHI, Miei TAKAHAMA
  • Patent number: 9741924
    Abstract: A magnetic sensor has a pair of Hall elements formed in spaced-apart relationship on a front surface of a semiconductor substrate. A die pad is bonded to a back surface of the semiconductor substrate and overlaps the Hall elements. The die pad has formed therein a magnetic converging plate holder having a recessed portion, and a magnetic converging plate having the same shape and size as the recessed portion is fitted in the recessed portion of the magnetic converging plate holder.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: August 22, 2017
    Assignee: SII Semiconductor Corporation
    Inventors: Takaaki Hioka, Mika Ebihara
  • Patent number: 9599682
    Abstract: Provided is a highly sensitive vertical Hall element without increasing a chip area. In the vertical Hall element, trenches each filled with an insulating film are formed between a first current supply end and voltage output ends, respectively, which enables the restriction of current flow into the voltage output ends to increase the ratio of a current component perpendicular to a substrate surface, resulting in enhanced sensitivity.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: March 21, 2017
    Assignee: SII Semiconductor Corporation
    Inventors: Satoshi Suzuki, Mika Ebihara, Takaaki Hioka
  • Patent number: 9523745
    Abstract: Provided are a magnetic sensor and a method of manufacturing the same capable of arranging a magnetic converging plate on a substrate on which Hall elements and a circuit are formed, with a small variation in position while suppressing an increase in number of work processes, the magnetic converging plate having high magnetic permeability and low coercive force. In the magnetic sensor and the method of manufacturing the same, in forming Hall elements and a circuit on a silicon substrate, a magnetic converging plate holder having a pattern recessed to have the same shape and size as those of a magnetic converging plate is formed, and, into the magnetic converging plate holder, the magnetic converging plate manufactured through processes different from those of the silicon substrate on which the Hall elements and the circuit are formed is inserted.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: December 20, 2016
    Assignee: SII Semiconductor Corporation
    Inventors: Takaaki Hioka, Mika Ebihara