Patents by Inventor Mika Ishiwata
Mika Ishiwata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8278195Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: GrantFiled: November 2, 2011Date of Patent: October 2, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Publication number: 20120045593Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: ApplicationFiled: November 2, 2011Publication date: February 23, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Mitsunori SAKAMA, Hisashi ABE, Hiroshi UEHARA, Mika ISHIWATA
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Patent number: 8053338Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: GrantFiled: April 2, 2009Date of Patent: November 8, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Patent number: 7723218Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: GrantFiled: April 11, 2005Date of Patent: May 25, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Publication number: 20090197012Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: ApplicationFiled: April 2, 2009Publication date: August 6, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Mitsunori SAKAMA, Hisashi ABE, Hiroshi UEHARA, Mika ISHIWATA
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Patent number: 7297469Abstract: In a method of manufacturing a cold cathode field emission device, a cathode electrode 11, an insulating layer 12 and a gate electrode 13 are formed; an opening portion 14 is formed through the gate electrode 13 and the insulating layer 12 to expose the cathode electrode 11; a resist-material layer 20 covering the side wall of the opening portion 14, the gate electrode 13 and the insulating layer 12 is formed; the surface of the resist-material layer is modified to form a modified layer 21; an electron emitting portion 15 constituted of the thick-film-paste-material layer 22 is formed on the cathode electrode 11 positioned in the bottom portion of the opening portion 14; and then, the resist-material layer 20 is removed.Type: GrantFiled: March 20, 2003Date of Patent: November 20, 2007Assignee: Sony CorporationInventors: Motohiro Toyota, Mika Ishiwata
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Publication number: 20060078829Abstract: In a method of manufacturing a cold cathode field emission device, a cathode electrode 11, an insulating layer 12 and a gate electrode 13 are formed; an opening portion 14 is formed through the gate electrode 13 and the insulating layer 12 to expose the cathode electrode 11; a resist-material layer 20 covering the side wall of the opening portion 14, the gate electrode 13 and the insulating layer 12 is formed; the surface of the resist-material layer is modified to form a modified layer 21; an electron emitting portion constituted of the thick-film-paste-material layer 22 is formed on the cathode electrode 11 positioned in the bottom portion of the opening portion 14; and then, the resist-material layer 20 is removed.Type: ApplicationFiled: March 20, 2003Publication date: April 13, 2006Inventors: Motohiro Toyota, Mika Ishiwata
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Publication number: 20050176221Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: ApplicationFiled: April 11, 2005Publication date: August 11, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Publication number: 20030066485Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: ApplicationFiled: November 25, 2002Publication date: April 10, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Patent number: 6499427Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: GrantFiled: August 24, 2001Date of Patent: December 31, 2002Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata
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Patent number: 6283060Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.Type: GrantFiled: April 30, 1998Date of Patent: September 4, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata