Abstract: An atomic layer deposition apparatus and a method for processing a surface of a substrate successively with at least a first precursor and a second precursor. The apparatus includes a substrate support and a precursor supply head. The substrate support and the precursor supply head are arranged opposite to each other such that a reaction gap is provided between the substrate support and the precursor supply head. The apparatus further includes a moving mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The moving mechanism is arranged move the substrate support and the precursor supply head relative to each other in a moving direction such that the reaction gap is adjusted.

Abstract: An atomic layer deposition apparatus includes a substrate support having a support surface, a precursor supply head having an output face, and a rotating mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The apparatus further includes a process chamber provided with a discharge connection for discharging gases from the process chamber.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: The invention relates to a nozzle head for subjecting a surface of a substrate to successive surface reactions of at least two precursor gases according to the principles of atomic layer deposition. The nozzle head comprises a body; an output face via which at least one precursor gas is supplied towards the surface of the substrate; and two or more nozzles provided in connection with the output face for supplying the at least one precursor gas. The nozzle head further comprises a nozzle head chamber inside the body of the nozzle head, said nozzle head chamber is arranged in fluid communication with the two or more nozzles. The nozzle head chamber is provided with a gas inlet for supplying gas into the nozzle head chamber from a gas source outside the nozzle head.

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate. The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: An apparatus for processing a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor, wherein the apparatus includes at least one nozzle head having two or more precursor nozzles for subjecting the surface of the substrate to at least the first and second precursor, and a moving mechanism for moving the nozzle head in non-linear oscillating movement between a first extreme position and a second extreme position via a centre position. The moving mechanism further includes a first driving mechanism and second driving mechanism connected to the nozzle head and arranged to control in co-operation the non-linear oscillating movement between the first and second extreme positions, and a transmission mechanism arranged between the first and second driving means, wherein the transmission means is connected to the first driving means and second driving means.

Abstract: The present invention relates to an apparatus and method for processing a surface of a substrate by subjecting the surface to successive surface reactions of a first and second precursor. The apparatus includes a nozzle head having two or more precursor nozzles and a moving mechanism for moving the nozzle head in non-linear oscillating movement in a first and second movement direction between a first extreme position and a second extreme position via a center position. The moving mechanism includes first driving means for accelerating the nozzle head in the first moving direction and decelerating the nozzle head in the second moving direction and second driving means for accelerating the nozzle head in the second moving direction and decelerating the nozzle head in the first moving direction.

Abstract: The present invention relates to an apparatus and method for processing a surface of a substrate by subjecting the surface to successive surface reactions of a first and second precursor. The apparatus includes a nozzle head having two or more precursor nozzles and a moving mechanism for moving the nozzle head in non-linear oscillating movement in a first and second movement direction between a first extreme position and a second extreme position via a centre position. The moving mechanism includes first driving means for accelerating the nozzle head in the first moving direction and decelerating the nozzle head in the second moving direction and second driving means for accelerating the nozzle head in the second moving direction and decelerating the nozzle head in the first moving direction.

Abstract: A nozzle and nozzle head arranged to subject a surface of a substrate to gaseous precursors. The nozzle includes an output face via which the precursor is supplied, a longitudinal precursor supply element for supplying precursor and a longitudinal discharge channel open to and along the output face for discharging at least a fraction of the precursor supplied from the precursor channel. The precursor supply element is arranged to extend inside the discharge channel such that the precursor supply element divides the discharge channel in the longitudinal direction to a first discharge sub-channel and a second discharge sub-channel on opposite sides of the precursor supply element for supplying precursor through the discharge channel.

Abstract: The invention relates to an arrangement in connection with an ALD reactor comprising a reaction chamber, the arrangement comprising fittings for feeding a reaction gas to the reaction chamber and for suctioning the reaction gas back, and fittings for feeding a barrier gas. The fittings for feeding and suctioning back the reaction gas and for feeding the barrier gas comprise a middle element having multiple parallel channels which extend through the element, and a first and a second flow-reversing element arranged at ends of the middle element into which the channels open, the flow-reversing elements being arranged to combine the channels in the middle element so as to provide an interchannel flow.

Abstract: The invention relates to an arrangement in connection with an ALD reactor comprising a reaction chamber, the arrangement comprising fittings for feeding a reaction gas to the reaction chamber and for suctioning the reaction gas back, and fittings for feeding a barrier gas. The fittings for feeding and suctioning back the reaction gas and for feeding the barrier gas comprise a middle element having multiple parallel channels which extend through the element, and a first and a second flow-reversing element arranged at ends of the middle element into which the channels open, the flow-reversing elements being arranged to combine the channels in the middle element so as to provide an interchannel flow.