Patents by Inventor Mikaïlou THIAM

Mikaïlou THIAM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240133028
    Abstract: The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.
    Type: Application
    Filed: February 8, 2022
    Publication date: April 25, 2024
    Inventors: Hermine Marie Berthon, Mikailou Thiam, Dominique Suhr, Yeeseul Kim, Céline Pascale Doussot
  • Publication number: 20230335496
    Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.
    Type: Application
    Filed: October 8, 2021
    Publication date: October 19, 2023
    Inventors: Frédéric RAYNAL, Vincent MEVELLEC, Mikailou THIAM, Amine LAKHDARI
  • Patent number: 11384445
    Abstract: The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: July 12, 2022
    Assignee: aveni
    Inventors: Vincent Mevellec, Dominique Suhr, Mikailou Thiam, Louis Caillard
  • Publication number: 20220090283
    Abstract: Electrodeposition of a cobalt or copper alloy, and use in microelectronics The present invention relates to a process for fabricating cobalt or copper interconnects, and to an electrolyte enabling implementation of said process. The electrolyte, with a pH of less than 4.0, comprises cobalt or copper ions, chloride ions, manganese or zinc ions, and at most two organic additives of low molecular mass. One of these additives may be an alpha-hydroxy carboxylic acid.
    Type: Application
    Filed: February 6, 2020
    Publication date: March 24, 2022
    Inventors: Vincent MEVELLEC, Louis CAILLARD, Mikaïlou THIAM, Dominique SUHR
  • Publication number: 20210079547
    Abstract: The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.
    Type: Application
    Filed: March 15, 2019
    Publication date: March 18, 2021
    Inventors: Vincent MEVELLEC, Dominique SUHR, Mikailou THIAM, Louis CAILLARD
  • Patent number: 10883185
    Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: January 5, 2021
    Assignee: aveni
    Inventors: Laurianne Religieux, Vincent Mevellec, Mikailou Thiam
  • Publication number: 20180363158
    Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.
    Type: Application
    Filed: December 26, 2017
    Publication date: December 20, 2018
    Inventors: Laurianne RELIGIEUX, Vincent MEVELLEC, Mikailou THIAM