Abstract: A device for shielding at least one component from thermal radiation, the device comprising at least a first substrate with a first surface and a second surface and a second substrate with a first surface and second surface, the first surface of the second substrate being arranged to at least partially face the second surface of the first substrate. The device additionally comprises at least a first component arranged on the first surface of the second substrate or the second surface of the first substrate and a shielding arrangement comprising a plurality of shielding elements-comprising electrically conductive material, the shielding elements being configured to essentially surround at least the first component to provide a shielded area within which the first component is located, wherein electromagnetic radiation having wavelength longer than a selected first wavelength is essentially prevented from reaching the shielded area.

Abstract: A thermalization arrangement at cryogenic temperatures is disclosed. The arrangement comprises a dielectric substrate layer on which substrate a device/s or component/s are positionable, and a heat sink component is attached on another side of the substrate. The arrangement further comprises a conductive layer between the substrate layer and the heat sink component. A joint between the substrate layer and the conductive layer has minimal phonon thermal boundary resistance. Energy of conductive layer phonons are arranged to be absorbed by electrons. Another joint between the conductive layer and the heat sink component is electrically conductive.

Abstract: An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.

Abstract: According to an example aspect of the present invention, there is provided a detector comprising an optically absorbing membrane suspended over a cavity between the membrane and a substrate, the substrate comprised in the detector, and a thermoelectric transducer attaching the optically absorbing membrane over the cavity, wherein the optically absorbing membrane forms a contacting element between n-type and p-type thermoelectric elements of the thermoelectric transducer.

Abstract: An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.

Abstract: An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Abstract: An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Abstract: A thermoelectric device (1) comprising a frame (2), a membrane (3) made of thermoelectric material, and an element (4) for absorbing or releasing energy. The element (4) is supported to the frame (2) solely by the membrane (3).

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a substrate, which includes silicon, implementing a semi-transparent reflective coating on the substrate, forming a passivated region in and/or on the substrate by etching a plurality of voids in the substrate, and by passivating the surfaces of the voids, forming a first sensor electrode on top of the passivated region, and forming a second sensor electrode supported by the substrate.

Abstract: A blank suitable for use as a body of a supercapacitor comprises a first porous semiconductor volume and a second porous semiconductor volume, the second porous semiconductor volume laterally surrounded by the first porous semiconductor volume and separated from it by a trench that is suitable for receiving an electrolyte, whereby the first and second porous semiconductor volume comprise channels opening to the trench. A supercapacitor comprises a body formed by using the blank according to any one of the preceding claims, so that the first porous semiconductor volume acts as one electrode and the second porous semiconductor volume acts as another electrode, with an electrolyte in the trench.

Abstract: The invention provides a micromechanical device comprising a support structure and a deflecting element connected to the support structure, wherein the deflecting element comprises at least one deformable member adapted to deform extensionally, flexurally or torsionally with respect to a deformation axis for allowing deflection of the deflecting element with respect to the support structure. Further, there are means for statically deflecting the deflecting element or detecting the magnitude of static deflection of the deflecting element. According to the invention, the deformable member is made of silicon doped with an n-type doping agent to a doping concentration of at least 1.1*1020 cm?3. The invention allows for manufacturing micromechanical devices whose mechanical operation is not affected by prevailing temperature conditions.

Abstract: A thermoelectric device (1) comprising a frame (2), a membrane (3) made of thermoelectric material, and an element (4) for absorbing or releasing energy. The element (4) is supported to the frame (2) solely by the membrane (3).

Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm?3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Abstract: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Abstract: A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor.

Abstract: A method for producing a mirror plate for a Fabry-Perot interferometer includes providing a substrate, which includes silicon, implementing a semi-transparent reflective coating on the substrate, forming a passivated region in and/or on the substrate by etching a plurality of voids in the substrate, and by passivating the surfaces of the voids, forming a first sensor electrode on top of the passivated region, and forming a second sensor electrode supported by the substrate.

Abstract: The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm?3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.

Abstract: A blank suitable for use as a body of a supercapacitor comprises a first porous semiconductor volume and a second porous semiconductor volume, the second porous semiconductor volume laterally surrounded by the first porous semiconductor volume and separated from it by a trench that is suitable for receiving an electrolyte, whereby the first and second porous semiconductor volume comprise channels opening to the trench. A supercapacitor comprises a body formed by using the blank according to any one of the preceding claims, so that the first porous semiconductor volume acts as one electrode and the second porous semiconductor volume acts as another electrode, with an electrolyte in the trench.

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract: A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor.