Abstract: A problem to be solved by the present invention is to provide one or more selected from (1) a feed comprising Lactobacillus plantarum strain L-137 or a processed product thereof and a fatty acid or a salt thereof, (2) a composition for enhancing IL-12 production, comprising Lactobacillus plantarum strain L-137 or a processed product thereof and a fatty acid or a salt thereof, (3) a composition for immunostimulation, comprising Lactobacillus plantarum strain L-137 or a processed product thereof and a fatty acid or a salt thereof, and (4) a composition for bacteriostasis, comprising Lactobacillus plantarum strain L-137 or a processed product thereof and a fatty acid or a salt thereof. The problem is solved by providing one or more of the feed or the compositions.

Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.

Abstract: A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.