Abstract: A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength ?1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength ?2, which is greater than the first wavelength ?1.

Abstract: A method of producing a conversion element includes forming a preform from a glass, reshaping the preform into a structured glass fiber using a structuring element, and dividing the glass fiber into conversion elements.

Abstract: A ceramic conversion element includes a multiplicity of first regions and a multiplicity of second regions, wherein the first regions vitreous, ceramic or monocrystalline fashion, at least either the first regions or the second regions are columnar and have a preferred direction forming an angle of at most 45° with a normal to a main surface of the conversion element, the first regions convert electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range different from the first wavelength range, the second regions convert electromagnetic radiation in the first wavelength range into electromagnetic radiation in a third wavelength range different from the first and second wavelength ranges, wherein the second regions are formed by a resin into which phosphor particles are embedded.

Abstract: A wavelength conversion element including at least two ceramic conversion segments each including a ceramic wavelength conversion substance and connected together in a matrix by a non-transparent connecting material, wherein each conversion segment emits light by absorbing primary radiation and re-emitting secondary radiation different from the primary radiation, and the light comprises the secondary radiation and a proportion of the primary radiation is less than or equal to 5%.

Abstract: A method for manufacturing a ceramic luminescence conversion element includes providing a shaped body having a first main surface, a second main surface and a first lateral surface. The shaped body includes a ceramic material and a luminescence conversion substance. The first main surface and/or the second main surface of the shaped body is/are machined using a patterning method, so that at least one first machined area and at least one unmachined area are formed. The first machined area extends essentially parallel to the first lateral surface. Singularization is performed to produce a plurality of luminescence conversion elements by means of cuts that are made in the machined main surface of the machined shaped body essentially at right angles to the first lateral surface.

Abstract: A conversion component for arrangement downstream at a radiation-outcoupling face of a radiation-emitting semiconductor chip is specified. The component has a converter element with a first major face, a second major face opposite the first major face and at least one side face. The side face connects together the two major faces. The converter element contains at least one luminescence conversion material, which is suitable for absorbing electromagnetic radiation of one wavelength range and for re-emitting the absorbed electromagnetic radiation in another wavelength range with larger wavelengths than the absorbed radiation. A reflective coating is designed to reflect electromagnetic radiation exiting from the converter element and to reflect it at least in part back into the converter element. The reflective coating covers the converter element at least in places at the at least one side face.

Abstract: A ceramic conversion element having a multiplicity of columnar regions arranged within a ceramic or vitreous matrix, wherein the columnar regions have a preferential direction which makes an angle of at most 45° with a normal to the main surface of the conversion element, at least either the columnar regions or the matrix convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range different from the first wavelength range and, the columnar regions are formed by wavelength-converting monocrystalline or ceramic fibers and/or monocrystalline or ceramic platelets, said fibers and/or said platelets are provided with a reflective coating.

Abstract: A wavelength conversion element including at least two ceramic conversion segments each including a ceramic wavelength conversion substance and connected together in a matrix by a non-transparent connecting material, wherein each conversion segment emits light by absorbing primary radiation and re-emitting secondary radiation different from the primary radiation, and the light comprises the secondary radiation and a proportion of the primary radiation is less than or equal to 5%.

Abstract: A ceramic conversion element includes a multiplicity of first regions and a multiplicity of second regions, wherein the first regions vitreous, ceramic or monocrystalline fashion, at least either the first regions or the second regions are columnar and have a preferred direction forming an angle of at most 45° with a normal to a main surface of the conversion element, the first regions convert electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range different from the first wavelength range, the second regions convert electromagnetic radiation in the first wavelength range into electromagnetic radiation in a third wavelength range different from the first and second wavelength ranges, wherein the second regions are formed by a resin into which phosphor particles are embedded.

Abstract: A ceramic conversion element having a multiplicity of columnar regions arranged within a ceramic or vitreous matrix, wherein the columnar regions have a preferential direction which makes an angle of at most 45° with a normal to the main surface of the conversion element, at least either the columnar regions or the matrix convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range different from the first wavelength range and, the columnar regions are formed by wavelength-converting monocrystalline or ceramic fibers and/or monocrystalline or ceramic platelets, said fibers and/or said platelets are provided with a reflective coating.

Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Abstract: A method of producing a conversion element includes forming a preform from a glass, reshaping the preform into a structured glass fiber using a structuring element, and dividing the glass fiber into conversion elements.

Abstract: A conversion component for arrangement downstream at a radiation-outcoupling face of a radiation-emitting semiconductor chip is specified. The component has a converter element with a first major face, a second major face opposite the first major face and at least one side face. The side face connects together the two major faces. The converter element contains at least one luminescence conversion material, which is suitable for absorbing electromagnetic radiation of one wavelength range and for re-emitting the absorbed electromagnetic radiation in another wavelength range with larger wavelengths than the absorbed radiation. A reflective coating is designed to reflect electromagnetic radiation exiting from the converter element and to reflect it at least in part back into the converter element. The reflective coating covers the converter element at least in places at the at least one side face.

Abstract: A method for producing a radiation conversion element is provided, in which a solution is applied to a substrate, a gel is formed from the solution and the gel is thermally treated. A radiation conversion element is also provided which is produced according to the method. An optoelectronic component is also provided which contains a radiation conversion element.

Abstract: A method for manufacturing a ceramic luminescence conversion element includes providing a shaped body having a first main surface, a second main surface and a first lateral surface. The shaped body includes a ceramic material and a luminescence conversion substance. The first main surface and/or the second main surface of the shaped body is/are machined using a patterning method, so that at least one first machined area and at least one unmachined area are formed. The first machined area extends essentially parallel to the first lateral surface. Singularization is performed to produce a plurality of luminescence conversion elements by means of cuts that are made in the machined main surface of the machined shaped body essentially at right angles to the first lateral surface.

Abstract: A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength ?1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength ?2, which is greater than the first wavelength ?1.

Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.