Patents by Inventor Mikael Nersesyan

Mikael Nersesyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing high-surface-area silicon
    Patent number: 7964172
    Abstract: A method for synthesis of high surface-area (>100 m2/g) and nanosized (?100 nm) silicon powder by initiation of self-sustained combustion reaction in a mixture of silicon dioxide and magnesium powders in a sealed reactor chamber under pressurized inert gas atmosphere. A specific feature of the method is rapid cooling of the product at a rate of 100 K/s to 400 K/s in the area directly behind the combustion front.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: June 21, 2011
    Inventors: Alexander Mukasyan, Vasiliy Mukasyan, Mikael Nersesyan
  • Method of manufacturing sub-micron silicon-carbide powder
    Patent number: 7939044
    Abstract: A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: May 10, 2011
    Inventors: Alexander Mukasyan, Vasiliy Mukasyan, Mikael Nersesyan, Surên Kharatyan, Hayk Khachatryan
  • Method of manufacturing high-surface-area silicon
    Publication number: 20110085960
    Abstract: A method for synthesis of high surface-area (>100 m2/g) and nanosized (?100 nm) silicon powder by initiation of self-sustained combustion reaction in a mixture of silicon dioxide and magnesium powders in a sealed reactor chamber under pressurized inert gas atmosphere. A specific feature of the method is rapid cooling of the product at a rate of 100 K/s to 400 K/s in the area directly behind the combustion front.
    Type: Application
    Filed: October 13, 2009
    Publication date: April 14, 2011
    Inventors: Alexander Mukasyan, Vasiliy Mukasyan, Mikael Nersesyan
  • Method of manufacturing sub-micron silicon-carbide powder and composition for manufacturing thereof
    Publication number: 20090202414
    Abstract: A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture.
    Type: Application
    Filed: February 11, 2008
    Publication date: August 13, 2009
    Inventors: Alexander Mukasyan, Vasiliy Mukasyan, Mikael Nersesyan, Kharatyan, Hayk Khachatryan