Patents by Inventor Mikael Zackrisson

Mikael Zackrisson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020027242
    Abstract: To reduce parasitic capacitances between drain and source electrodes, respectively, and gate electrodes in a power MOS transistor, the drain and the source electrodes (D′, S′) are located below the gate electrodes (G) in the transistor.
    Type: Application
    Filed: August 1, 2001
    Publication date: March 7, 2002
    Inventors: Mikael Zackrisson, Nils af Ekenstam, Jan Johansson
  • Patent number: 6063693
    Abstract: Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: May 16, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Mikael Zackrisson
  • Patent number: 5977609
    Abstract: An island of material has an insulating trench structure. The trench structure includes a first insulating trench surrounded by a second insulating trench. The trenches are joined together by at least two transverse linking trenches.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: November 2, 1999
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Mikael Zackrisson