Patents by Inventor Mikai Chen

Mikai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220066924
    Abstract: A processing device of a memory sub-system performs an operation including obtaining, at a first time, a first scaling factor for a data unit of a set of data units of a memory device. The first scaling factor is associated with a first number of write operations performed at the data unit and a first number of read operations performed at the data unit. The processing device also performs an operation including calculating a first media management metric based on at least the first scaling factor, the first number of write operations, and the first number of read operations. In response to determining that the first media management metric satisfies a media management criterion, the processing device performs a media management operation on the data unit.
    Type: Application
    Filed: August 27, 2020
    Publication date: March 3, 2022
    Inventors: Mikai Chen, Zhenlei Shen, Murong Lang, Zhenming Zhou
  • Publication number: 20220050618
    Abstract: A method includes performing a quantity of write cycles on memory components. The method can further include monitoring codewords, and, for each of the codewords including a first error parameter value, determining a second error parameter value. The method can further include determining a probability that each of the codewords is associated with a particular one of the second error parameter values at the first error parameter value and determining a quantity of each of the codewords that are associated with each of the determined probabilities. The method can further include determining a statistical boundary of the quantity of each of the codewords and determining a correlation between the quantity of write cycles performed and the corresponding determined statistical boundary of the quantity of each of the codewords.
    Type: Application
    Filed: August 11, 2020
    Publication date: February 17, 2022
    Inventors: Mikai Chen, Murong Lang, Zhenming Zhou
  • Publication number: 20220043493
    Abstract: A method includes monitoring temperature characteristics for a plurality of memory components of a memory sub-system and determining that a temperature characteristic corresponding to at least one of the memory components has reached a threshold temperature. The method further includes determining a data reliability parameter for the at least one of the memory components that has reached the threshold temperature, determining whether the determined data reliability parameter is below a threshold data reliability parameter value for the at least one of the memory components that has reached the threshold temperature, and, based on determining that the data reliability parameter for the at least one of the memory components that has reached the threshold temperature is below the threshold data reliability parameter value, refraining from performing a thermal throttling operation.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 10, 2022
    Inventors: Mikai Chen, Zhenming Zhou, Zhenlei Shen, Murong Lang
  • Patent number: 11231870
    Abstract: A method includes performing a quantity of write cycles on memory components. The method can further include monitoring codewords, and, for each of the codewords including a first error parameter value, determining a second error parameter value. The method can further include determining a probability that each of the codewords is associated with a particular one of the second error parameter values at the first error parameter value and determining a quantity of each of the codewords that are associated with each of the determined probabilities. The method can further include determining a statistical boundary of the quantity of each of the codewords and determining a correlation between the quantity of write cycles performed and the corresponding determined statistical boundary of the quantity of each of the codewords.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: January 25, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Mikai Chen, Murong Lang, Zhenming Zhou
  • Patent number: 11222710
    Abstract: A method includes determining, for a plurality of memory dice, a signal reliability characteristic and ranking the plurality of memory dice based, at least in part, on the determined reliability characteristics. The method can further include arranging the plurality of memory dice to form a memory device based, at least in part, on the ranking.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: January 11, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Mikai Chen, Zhenming Zhou, Zhenlei Shen, Murong Lang
  • Publication number: 20210042224
    Abstract: Data can be received to be stored at a memory component. A first location of a first layer of the memory component to store a first portion of the data can be determined. A second location of a second layer of the memory component to store a second portion of the data can be determined, where the second layer is different from the first layer. The first portion of the data can be stored at the first layer of the memory component and the second portion of the data can be stored at the second layer of the memory component.
    Type: Application
    Filed: August 5, 2019
    Publication date: February 11, 2021
    Inventors: Mikai Chen, Zhengang Chen, Charles See Yeung Kwong
  • Patent number: 9960175
    Abstract: A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: May 1, 2018
    Assignee: The Regents of The University of Michigan
    Inventors: Xiaogan Liang, Hongsuk Nam, Sungjin Wi, Mikai Chen
  • Publication number: 20170018561
    Abstract: A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer structure of atomically thin two-dimensional sheets.
    Type: Application
    Filed: March 6, 2015
    Publication date: January 19, 2017
    Inventors: Xiaogan LIANG, Hongsuk NAM, Sungjin WI, Mikai CHEN
  • Patent number: 9373742
    Abstract: Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: June 21, 2016
    Assignee: The Regents Of The University Of Michigan
    Inventors: Xiaogan Liang, Hongsuk Nam, Sungjin Wi, Mikai Chen
  • Publication number: 20150255661
    Abstract: Plasma-assisted techniques are provided for fabricating semiconductor devices. In one aspect, a plasma is applied to a substrate before exfoliating layers of a multi-layer structure of atomically thin two-dimensional sheets onto the substrate. The exfoliated layers serve as the basis for constructing a semiconductor device. In another aspect, a p-n junction is formed by applying a plasma to top layers of a multi-layer structure of atomically thin two-dimensional sheets and then exfoliating a portion of the multi-layer structure onto a bottom electrode.
    Type: Application
    Filed: March 6, 2015
    Publication date: September 10, 2015
    Inventors: Xiaogan Liang, Hongsuk Nam, Sungjin Wi, Mikai Chen