Patents by Inventor Mike Antcliffe

Mike Antcliffe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High power-low noise microwave GaN heterojunction field effect transistor
    Patent number: 7598131
    Abstract: A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: October 6, 2009
    Assignee: HRL Laboratories, LLC
    Inventors: Miroslav Micovic, Tahir Hussain, Paul Hashimoto, Mike Antcliffe
  • High power-low noise microwave GaN heterojunction field effect transistor
    Patent number: 7470941
    Abstract: A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
    Type: Grant
    Filed: December 6, 2002
    Date of Patent: December 30, 2008
    Assignee: HRL Laboratories, LLC
    Inventors: Miroslav Micovic, Mike Antcliffe, Tahir Hussain, Paul Hashimoto
  • High power-low noise microwave GaN heterojunction field effet transistor
    Publication number: 20030218183
    Abstract: A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
    Type: Application
    Filed: December 6, 2002
    Publication date: November 27, 2003
    Inventors: Miroslav Micovic, Mike Antcliffe, Tahir Hussain, Paul Hashimoto