Patents by Inventor Mike Aumer

Mike Aumer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid solution wide bandgap semiconductor materials
    Publication number: 20080206121
    Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
    Type: Application
    Filed: April 18, 2008
    Publication date: August 28, 2008
    Inventors: Narsingh Bahadur Singh, Brian Wagner, Mike Aumer, Darren Thomson, David Kahler, Andre Berghmans, David J. Knuteson
  • Solid solution wide bandgap semiconductor materials
    Patent number: 7371282
    Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: May 13, 2008
    Assignee: Northrop Grumman Corporation
    Inventors: Narsingh Bahadur Singh, Brian Wagner, Mike Aumer, Darren Thomson, David Kahler, Andre Berghmans, David J. Knuteson
  • Solid solution wide bandgap semiconductor materials
    Publication number: 20080011223
    Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
    Type: Application
    Filed: July 12, 2006
    Publication date: January 17, 2008
    Inventors: Narsingh Bahadur Singh, Brian Wagner, Mike Aumer, Darren Thomson, David Kahler, Andre Berghmans, David J. Knuteson