Patents by Inventor Mike E. Pugh

Mike E. Pugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7247227
    Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: July 24, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Robert J. Hanson, Won-Joo Kim, Mike E. Pugh
  • Publication number: 20030164350
    Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.
    Type: Application
    Filed: September 21, 2001
    Publication date: September 4, 2003
    Inventors: Robert J. Hanson, Won-Joo Kim, Mike E. Pugh
  • Patent number: 6471879
    Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: October 29, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Robert J. Hanson, Won-Joo Kim, Mike E. Pugh
  • Publication number: 20020011459
    Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.
    Type: Application
    Filed: September 21, 2001
    Publication date: January 31, 2002
    Inventors: Robert J. Hanson, Won-Joo Kim, Mike E. Pugh
  • Patent number: 6322712
    Abstract: In devices such as flat panel displays, an aluminum oxide layer is provided between an aluminum layer and an ITO layer when such materials would otherwise be in contact to protect the ITO from optical and electrical defects sustained, for instance, during anodic bonding and other fabrication steps. This aluminum oxide barrier layer is preferably formed either by: (1) partially or completely anodizing an aluminum layer formed over the ITO layer, or (2) an in situ process forming aluminum oxide either over the ITO layer or over an aluminum layer formed on the ITO layer. After either of these processes, an aluminum layer is then formed over the aluminum oxide layer.
    Type: Grant
    Filed: September 1, 1999
    Date of Patent: November 27, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Robert J. Hanson, Won-Joo Kim, Mike E. Pugh